Abstract:The successfully synthesized lead‐free 2D manganese‐based (Mn‐based) all‐inorganic perovskite exhibits high pure crystal with a high carrier transport performance. After optimization, the maximum hole mobility of 2D perovskite field effect transistor (PeFETs) is 24 cm2 V−1 s−1, and the on/off ratio is 105 surpassing all reported PeFETs. 2D perovskite is an organic–inorganic hybrid material with good photoelectric properties, generally prepared by using organic groups as isolation molecules. In this study, using manganese chloride and potassium halide as raw materials, all‐inorganic 2D lead‐free perovskites are prepared by the Bridgeman melting and cooling method. Different from the 2D perovskites synthesized by organic spacer molecules, the prepared all‐inorganic 2D perovskites have smaller layer spacings and good crystallization performance due to the use of potassium halide as spacer molecules. They are direct bandgap semiconductors and their energy bandgaps are tuned by the different types of potassium halides. High degree orientation crystal thin films with (001) lattice plane parallel to silicon wafer substrate are prepared by double‐source evaporation. The physical morphology of the films is characterized by grazing angle X‐ray diffraction, transmission electron microscopy, and electron diffraction. The field effect transistors prepared from these 2D films show excellent electronic characteristics. The mobility of the optimized device is ≈24 cm2 v−1 s−1 and the on/off ratio reaches 105. This study reveals the potential of lead‐free manganese 2D perovskite as a high‐performance perovskite field effect transistor.

High‐Performance P‐Channel Tin Halide Perovskite Thin Film Transistor Utilizing a 2D–3D Core–Shell Structure

High-performance hysteresis-free perovskite transistors through anion engineering

High‐Performance Tin‐Halide Perovskite Transistors Enabled by Multiple A‐Cation Engineering

High-performance Tin Perovskite Transistors Through Formate Pseudohalide Engineering

High-performance Inorganic Metal Halide Perovskite Transistors

Fluorinated Organic A-Cation Enabling High-Performance Hysteresis-Free 2D/3D Hybrid Tin Perovskite Transistors

Sodium Incorporation for Enhanced Performance of Two-Dimensional Sn-Based Perovskite Transistors.

Exceedingly High Performance Top-Gate P-Type SnO Thin Film Transistor with a Nanometer Scale Channel Layer

A novel TFT with organic-inorganic hybrid perovskite channel layer

High-Performance Layered Perovskite Transistors and Phototransistors by Binary Solvent Engineering

High‐Performance and Reliable Lead‐Free Layered‐Perovskite Transistors

Perovskite and Conjugated Polymer Wrapped Semiconducting Carbon Nanotube Hybrid Films for High-Performance Transistors and Phototransistors

High-performance P-Channel Transistors with Transparent Zn Doped-Cui

MXene-based metal halide perovskite vertical field-effect transistors: Toward high current-density and high photodetection performance

Solution-Processed Mixed-Dimensional Hybrid Perovskite/Carbon Nanotube Electronics

2D Metal Enabled Weak Fermi Level Pinning Effect and Tunable Charge Injection in Contacts with Inorganic 2D Perovskites

2D‐Layered Manganese Perovskite with High Mobility

A High‐Performance Photodetector Based on 1D Perovskite Radial Heterostructure

Performance Enhancement of 2D Tin-Halide Perovskite Transistors via Molecule-Assisted Grain Boundary Passivation and Hole Doping

Recent Progress on Metal Halide Perovskite Field-Effect Transistors

High-Performance Top-Gate Thin-Film Transistor with an Ultra-Thin Channel Layer