Organic Surface Doping for High‐Performance Perovskite Transistors

Ju‐Hyeon Kim,Chang‐Mok Oh,In‐Wook Hwang,Kiyoung Park,Kwanghee Lee

DOI: https://doi.org/10.1002/adfm.202411836

IF: 19

2024-08-31

Advanced Functional Materials

Abstract:A new p‐doping strategy is presented in which a sulfur‐containing polymer is introduced onto the top surface of a tin perovskite. The tin ions effectively interact with the sulfur ions, thereby generating hole carriers and significantly enhancing the charge transport ability. The doped tin perovskite‐based transistors exhibit a high field‐effect mobility of over 50 cm2V−1s−1 along with superior operational stability. Quasi‐2D perovskites have attracted significant attention because of their environmental robustness and superior long‐term stability compared with their 3D counterparts. However, they typically consist of a mixture of multiple quantum wells with different optoelectrical properties, which degrades the electronic properties and hinders further electronic applications. Here, to challenge this issue, a surface p‐doping strategy involving the introduction of a thiophene‐containing polymer onto the surface of quasi‐2D tin perovskites is reported. The tin ions in the perovskites effectively interact with the sulfur atoms in the thiophene moieties, thereby generating hole carriers and inducing p‐doping. The resulting doped quasi‐2D perovskites exhibit excellent surface crystallinity, lower trap density, and enhanced charge carrier transport capability along the perovskite semiconductor channels. Consequently, the doped quasi‐2D tin perovskite‐based transistors exhibit a high field‐effect mobility of 53 cm2V−1s−1 (7 cm2V−1s−1 for the control device) and an outstanding on/off ratio (>107), together with superior operational stability.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology