MXene-based metal halide perovskite vertical field-effect transistors: Toward high current-density and high photodetection performance

Haihong Xie,Ping-An Chen,Xincan Qiu,Yu Liu,Jiangnan Xia,Jing Guo,Huan Wei,Zhenqi Gong,Jiaqi Ding,Yuanyuan Hu

DOI: https://doi.org/10.1063/5.0141280

IF: 4

2023-04-15

Applied Physics Letters

Abstract:Metal halide perovskite field-effect transistors (MHP-FETs) are of great interest due to the fascinating photonic and electronic properties of perovskite semiconductors, and their low-temperature solution processability. However, present MHP-FETs suffer from the low current-density problem due to the low device mobility, which is an obstacle to their applications. Herein, we tackle this problem by adopting the vertical field-effect transistor (VFET) structure for the fabrication of MHP-VFETs. We show MHP-VFETs can be achieved by employing the MXene (Ti 3 C 2 T x ) film as perforated source electrodes, which are essential elements in VFETs, via a simple solution process. The MHP-VFETs exhibit high on/off ratio of 10 5 and, moreover, show large current density of over 6 mA cm −2 , thanks to the ultrashort channel length of the VFETs. Furthermore, the devices are found to exhibit excellent photodetection performance with photoresponsivity of 2.1 × 10 3 A W −1 and detectivity of 7.84 × 10 15 Jones. This study not only provides a route to achieve high-performance MHP-FETs but also shows the very promising prospects of MHP-VFETs for applications as backplane thin-film transistors and high-performance phototransistors.

physics, applied