Weak Fermi Level Pinning and Low Barrier Interfacial Contact: 2D Lead-free Perovskite on Multilayer GaN

Pengjie Fu,Mengni Liu,Guixian Ge,Jianguo Wan,Juan Hou,Xiaodong Yang

DOI: https://doi.org/10.2139/ssrn.4900127

IF: 6.4

2024-10-22

Journal of Materials Chemistry C

Abstract:Metal halide perovskites (MHPs) have shown great potential in the photovoltaic and electronic fields due to high charge carrier mobility, adjustable band gap and extremely high absorption coefficient. The formation of type-II band alignment heterojunction between perovskite and electron transport layer is a commonly used method to enhance electron transport. However, traditional heterojunctions have strong Fermi level pinning (FLP) and high contact potential barriers that limit electron transfer efficiency. In this work, we report a novel semiconductor-semiconductor junction (SSJ) based on MHP to simultaneously address the limitations of potential barriers and FLP on electron transport. By integrating Ba2+ passivated 2D lead-free perovskite with GaN nanosheets to construct the Ba-CsSrI3/GaN SSJ, we eliminate high potential barriers and overcome interfacial gap states to achieve effective carrier migration. It is found that the negative electron affinity (NEA) formed at the Ba/GaN (0001) interface eliminates the adverse effects of interface dipole moments, allowing electrons to spontaneously cross the interface though GaN layers. The Schottky-Mott rule proves that the FLP is controlled within a very small range. In addition, as the number of GaN layer increases, the NEA at the interface remains and the type-II band alignment changes to zero band gap while still maintaining the ability to extract electrons, forming the low barrier contact with a high conductivity of 7.79×103 S/cm. The findings demonstrate the significant potential of GaN as the electron transport layer of Ba-CsSrI3 perovskite in applications such as photovoltaic devices, photodetectors, and integrated circuits.

materials science, multidisciplinary,physics, applied