Abstract:The dimensionality of semiconductors has a crucial role in determining their properties. Recently, metal halide perovskites have been demonstrated with many exciting applications, attracting wide attention to further their development for advanced optoelectronics, such as photovoltaics, photodetectors, light-emitting diodes, and lasers. At length scales down to nanoscale regimes, surface features as well as quantum confinement effects become dominant in regulating the material properties of perovskite materials. In past years, our group focus on the synthesis and characterization of metal halide perovskites with different configurations, ranging from bulk films, microplates, nanosheets, to nanowires. The corresponding physical properties and device applications were also systematically studied based on their widely tunable dimensionality, morphologies, and compositions. Specifically, for perovskite bulk films, surface defects and bulk structural order significantly affect their device performance. Through optimizing processing techniques, self-assembled quasi-2D perovskite films with graded phase distribution were successfully prepared. Gradient type-II band alignments along the out-of-plane direction of perovskites with spontaneous separation of photo-generated electrons and holes are obtained, which is later employed to construct self-powered vertical-structure photodetectors for the first time. Without any driving voltage, the device exhibited impressive performance with the responsivity up to 444 mA/W and ultrashort response time down to 52 μs. In addition, to assess the intrinsic material properties of crystalline perovskites, freestanding MAPbI 3 nanosheets and lead-free Cs 3 Sb 2 I 9 microplates were fabricated by two-step chemical vapor deposition method, in which excellent optoelectronic performance (e.g., responsively of MAPbI 3 nanosheet is measured to be 40 A/W) together with ultra-fast response speed (down to 58 μs) and superior thermal stability were obtained. For nanostructured perovskites, understanding the dimensional features and their impact on the materials and devices is becoming increasingly important. Lately, we reported the direct vapor-liquid-solid growth of single-crystalline all-inorganic lead halide perovskite (i.e., CsPbX 3 ; X = Cl, Br, or I) NWs. These NWs exhibited high-performance photodetection with the responsivity exceeding 4489 A/W and detectivity over 7.9 × 10 12 Jones toward the visible light regime. Field-effect transistors based on individual CsPbX 3 NWs were also fabricated to show the impressive carrier mobility of 3.05 cm 2 /Vs, being higher than other all-inorganic perovskite devices. Besides, the realization of high-mobility CsPbBr 3 NW devices is reported via a simple surface charge transfer doping strategy. After MoO 3 decoration and device fabrication, the hole mobility of CsPbBr 3 /MoO 3 core-shell NW device is significantly enhanced to 23.3 cm 2 /Vs. All these results provide important guidelines for the further improvement of these perovskite nanostructures for practical utilization.

Vapor-Phase Incommensurate Heteroepitaxy of Oriented Single-Crystal CsPbBr3 on GaN: Toward Integrated Optoelectronic Applications

Periodic Organic–Inorganic Halide Perovskite Microplatelet Arrays on Silicon Substrates for Room‐Temperature Lasing

Van der Waals epitaxy of type-II band alignment CsPbI3/TMDC heterostructure for optoelectronic applications

Millimeter-scale Growth of Highly Ordered CsPbBr3 Single-Crystalline Microplatelets on SiO2/Si Substrate by Chemical Vapor Deposition

Efficient Flexible Inorganic Perovskite Light-Emitting Diodes Fabricated with CsPbBr3 Emitters Prepared Via Low-Temperature in Situ Dynamic Thermal Crystallization

Electrostatic epitaxy of orientational perovskites for microlasers

In Situ Growth of 3D/2D (CsPbBr3/CsPb2Br5) Perovskite Heterojunctions toward Optoelectronic Devices

Type-II Lateral Heterostructures of Monolayer Halide Double Perovskites for Optoelectronic Applications

High‐Quality Whispering‐Gallery‐Mode Lasing from Cesium Lead Halide Perovskite Nanoplatelets

Quasi van der Waals Epitaxy of Single Crystalline GaN on Amorphous SiO2/Si(100) for Monolithic Optoelectronic Integration

Facet-selective growth of halide perovskite/2D semiconductor van der Waals heterostructures for improved optical gain and lasing

Interfacial Alloying Between Lead Halide Perovskite Crystals and Hybrid Glasses

(Invited) From Bulk to Nanostructured Perovskites

Precise In-Situ Modulation of Bandgap-Controlled Single-Crystalline Perovskite Microlasers

Large-Scale Thin CsPbBr3 Single-Crystal Film Grown on Sapphire Via Chemical Vapor Deposition: Toward Laser Array Application

Epitaxial P-Si/cspbbr3 Heterostructure Photodetector with Enhanced Green Responsivity

Large-Scale Thin CsPbBr 3 Single-Crystal Film Grown on Sapphire via Chemical Vapor Deposition: Toward Laser Array Application

In Situ Low-Temperature Growth and Superior Luminescent Property of Well-Aligned, High-Quality Cubic CsPbBr3 Micrometer-Scale Single Crystal Arrays on Transparent Conductive Substrates.

Surface and grain boundary carbon heterogeneity in CH 3 NH 3 PbI 3 perovskites and its impact on optoelectronic properties

First-principles Calculations for Heterostructure Studies Involving CsPbI3 Perovskite and IV-VI Semiconductors

In Situ Growth of All-Inorganic Perovskite Single Crystal Arrays on Electron Transport Layer