Interfacial transport modulation by intrinsic potential difference of janus TMDs based on CsPbI3/J-TMDs heterojunctions

Haidong Yuan,Jie Su,Siyu Zhang,Jiayu Di,Zhenhua Lin,Jincheng Zhang,Jie Zhang,Jingjing Chang,Yue Hao
DOI: https://doi.org/10.1016/j.isci.2022.103872
IF: 5.8
2022-02-04
iScience
Abstract:Although perovskite/two-dimensional (2D) materials heterojunctions have been employed to improve the optoelectronic performance of perovskite photodetectors and solar cells, effects of the intrinsic potential difference (ΔV in ) of asymmetrical 2D materials, like Janus TMDs (J-TMDs), were not revealed yet. Herein, by investigating the optoelectronic properties of CsPbI3/J-TMDs heterojunctions, we find a reversible type-II band alignment related to the intensity and direction of ΔV in , suggesting that carrier transport paths can be reversed by modulating the contact configuration of J-TMDs in the heterojunctions. Meanwhile, the band offset, carrier transfer efficiency and optical properties of those heterojunctions are directly determined by the intensity and direction of ΔV in . Overall, CsPbI3/MoSSe heterojunction is suggested in this work with a tunneling probability of 79.65%. Our work unveils the role of ΔV in in asymmetrical 2D materials on the optoelectronic performances of lead halide perovskite devices, and provides a guideline to design high performance perovskite optoelectronic devices.
What problem does this paper attempt to address?