Perovskite Photodetectors Based on p-i-n Junction With Epitaxial Electron-Blocking Layers

Yubing Xu,Xin Wang,Yuzhu Pan,Yuwei Li,Elias Emeka Elemike,Qing Li,Xiaobing Zhang,Jing Chen,Zhiwei Zhao,Wei Lei

DOI: https://doi.org/10.3389/fchem.2020.00811

IF: 5.5

2020-09-15

Frontiers in Chemistry

Abstract:Organic-inorganic hybrid perovskite single crystals (PSCs) have been emerged as remarkable materials for some optoelectronic applications such as solid-state photodetectors, solar cells and light emitting diodes due to their excellent optoelectronic properties. To decrease the dark current, function layers based on spin-coating method are frequently requested for intrinsic PSCs to block the injected current by forming energy barrier. However, the amorphous function layers suffer from small carrier mobility and high traps density, which limit the speed of the photoelectric response of perovskite devices. This work supposes to grow thick MAPbBr₃ and MAPbI₃ mono-crystalline thin films on the surface of intrinsic MAPbBr_2.5Cl_0.5 PSCs substrate by a heteroepitaxial growth technique to act as electron-blocking layers. Meanwhile, C60 and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) layers are deposited on the opposite surface of substrate PSCs by spin-coating method to block injected holes. This Au-MAPbI₃-MAPbBr₃-MAPbBr_2.5Cl_0.5PSCs-C60-PCBM-Ag heterostructure can be used as excellent X-ray photodetector (XPD) due to its low dark current density of 6.97 × 10⁻¹¹ A cm⁻² at −0.5 V bias, high responsivity of 870 mA/W at −100 V bias and X-ray sensitivity as high as 59.7 μC mGy⁻¹ cm⁻² at −50 V bias.

chemistry, multidisciplinary

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to improve the performance of perovskite - based photodetectors in terms of low dark - current density, high responsivity and high X - ray sensitivity. Specifically, the authors focus on growing high - quality perovskite thin films on organic - inorganic hybrid perovskite single - crystal (OIHPSCs) substrates as electron - blocking layers through heteroepitaxial growth techniques, so as to reduce the dark current and improve the photoelectric response speed of the device. This method aims to overcome the defects of the functional layers prepared by the traditional spin - coating method, such as low carrier mobility, high trap density and large leakage current, etc., and then improve the overall performance of the photodetector, especially in X - ray detection applications.

The key technical points mentioned in the paper include:

- **Heteroepitaxial growth technique**: Use the solution - processing method to grow perovskite thin films with high crystallinity on perovskite single - crystal substrates.
- **p - i - n structure**: A heterostructure composed of gold (Au), methylammonium lead iodide (MAPbI₃), methylammonium lead bromide (MAPbBr₃), methylammonium lead bromochloride (MAPbBr₂.₅Cl₀.₅) perovskite single - crystal, C₆₀ and [6,6] - phenyl - C₆₁ - butyric acid methyl ester (PCBM) is constructed, where MAPbBr₃ and MAPbI₃ thin films are used as p - type and n - type semiconductor materials respectively to block the injected holes and electrons.
- **Performance optimization**: Through the above design, an X - ray photodetector with low dark - current density (6.97×10⁻¹¹ A/cm² @ - 0.5V bias), high responsivity (870 mA/W @ - 100V bias) and high X - ray sensitivity (59.7 µC mGy⁻¹cm⁻² @ - 50V bias) is realized.

These improvements are of great significance for the development of high - performance X - ray detection devices, especially in application scenarios requiring high sensitivity and low noise.