Instability Induced by Ultraviolet Light in Zno Thin-Film Transistors

Ping Wu,Jie Zhang,Jianguo Lu,Xifeng Li,Chuanjia Wu,Rujie Sun,Lisha Feng,Qingjun Jiang,Bin Lu,Xinhua Pan,Zhizhen Ye

DOI: https://doi.org/10.1109/ted.2014.2312947

IF: 3.1

2014-01-01

IEEE Transactions on Electron Devices

Abstract:We investigate the electrical properties of ZnO thin-film transistors (TFTs) under the ultraviolet (UV) light illumination to clarify the device reliability. The ON/OFF current ratio of ZnO TFTs shows an evident reduction due to the creation of UV photo-induced current. This behavior degradation becomes severe for devices exposed to a short-wavelength UV light. The persistent photoconductivity is observed in ZnO TFTs under the UV illumination with a much slower decay for the ON-state than the OFF-state, which is attributed to the reduced recombination under a positive gate bias. The UV light instabilities of ZnO TFTs can be explained on the basis of UV photoexcited oxygen vacancies. A feasible mechanism model is proposed in this paper. These observations and analytical model not only provide useful physical insight into the device behaviors, but also offer basic design guideline for oxide TFTs.