Abstract:The electrical and optical stability of amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) related to the channel composition (the concentration of oxygen vacancy, V-O(2+)) and gate dielectrics are discussed. With the filling of V-O(2+), the electron density (Ne) in a-IGZO decreases from 7.5 to 3.8 (x10(16)cm(-3)) with the increase of Fermi level and decrease of density of deep charged traps, and therefore the electrical stability of TFTs decreases from A Vth of 4.5 to 10V. The optical stability of a-IGZO TFTs is also sensitive to the V-O(2+). With the increase of V-O(2+) the absorption increases and Eg decreases for a-IGZO, therefore the number of generating photoelectrons increases and the stability of TFT. decreases. The SiNx-gated TFT shows good electrical stability, but its optical stability is an issue, which shows a larger off-state photo leakage current (Delta I-d similar to 13 mu A) and decrease of Vth (vertical bar Delta V-th vertical bar>14V) than those of the SiO2-gated TFT (Delta I-d similar to 12 nA, vertical bar Delta V-th vertical bar similar to 8V). The model of charge trapping at the interface of gate dielectric/a-IGZO is only valid for the mechanism of electrical stability. It is proposed that due to the larger absorption of visible light of SiNX gate dielectric, and the smaller Delta Ev between SiNX and a-IGZO film, the photo created holes carriers in a-IGZO.chginel can be injected more easily into SiNX during light on resulting a significant increase of N-e in a-IGZO, therefore an apparent decrease of V-th for TFT.

Electrical Instability of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors under Ultraviolet Illumination

Instability Induced by Ultraviolet Light in Zno Thin-Film Transistors

Origin of light instability in amorphous IGZO thin-film transistors and its suppression

Stability of Amorphous Indium–Tungsten Oxide Thin-Film Transistors under Various Wavelength Light Illumination

Effects of Ultraviolet Light on the Dual-Sweep $I$ – $V$ Curve of A-Ingazno 4 Thin-Film Transistor

Stability of Low Temperature and Transparent Amorphous Ingazno Thin Film Transistor under Illumination

Effects Of Channel Composition And Gate Dielectrics On The Stability Of A-Igzo Tfts

Drain Current Stress-Induced Instability in Amorphous InGaZnO Thin-Film Transistors with Different Active Layer Thicknesses

Instability of Indium Zinc Oxide Thin-Film Transistors under Transmission Line Pulsed Stress

Stability Study of Indium Tungsten Oxide Thin-Film Transistors Annealed under Various Ambient Conditions

Improving electrical stability of a-InGaZnO TFTs under monochromatic light illumination by nitrogen doping

Competition Between Heating and Cooling During Dynamic Self-Heating Degradation of Amorphous InGaZnO Thin-Film Transistors

Fluorination-mitigated High-Current Degradation of Amorphous InGaZnO Thin-Film Transistors

Electrical And Photosensitive Characteristics Of A-Igzo Tfts Related To Oxygen Vacancy

Temperature-dependent bias-stress-induced electrical instability of amorphous indium-gallium-zinc-oxide thin-film transistors

Increased Threshold Voltage of Amorphous InGaZnO Thin-Film Transistors After Negative Bias Illumination Stress

Abnormal Threshold Voltage Shifts in P-Channel Low Temperature Polycrystalline Silicon TFTs under Deep UV Irradiation

Stability of Amorphous Inalzno Thin-Film Transistors

Bi-directional threshold voltage shift of amorphous InGaZnO thin film transistors under alternating bias stress

Anomalous Threshold Voltage Shift and Surface Passivation of Transparent Indium–Zinc–Oxide Electric-Double-Layer TFTs

Light-illumination stability of amorphous InGaZnO thin film transistors in oxygen and moisture ambience