Abstract:The thin‐film transistors based on metal‐oxide semiconductors are often plagued by the stubborn trade‐off between mobility and stability. A novel combination of the metal‐oxide bilayer with an ultrathin interlayer of metal‐oxide dielectric forms an abrupt metal‐oxide heterojunction channel, synergistically enhancing performance and reliability. The large‐area low‐temperature processing capability and versatile characteristics of amorphous oxide semiconductor (AOS) thin‐film transistors (TFTs) are highly expected to promote the developments of next‐generation displays, 3D integrated circuit (3DIC), flexible chips, and electronics. However, the abundant native defects in AOSs engrain an inherent trade‐off between high mobility and trustworthy stability in AOS TFTs, fundamentally limiting the performance metrics and integration scale of oxide‐based electronics. To surmount this obstacle, the bilayer AOS channel is highly expected to combine the merits of diversified AOSs, while the efficiency of such an AOS "heterojunction" is debatable. This work systematically compares the TFTs based on amorphous InGaZnO (a‐IGZO), amorphous InZnO (a‐IZO), and a‐IZO/a‐IGZO bilayer. The active cation interaction between metal‐oxide semiconductors gives rise to a mixed AOS layer rather than a heterojunction channel, corresponding to moderate performance metrics. Such a spontaneous cation interdiffusion is effectively prevented using a dense metal‐oxide dielectric interlayer, aluminum oxide (AlOx). The sharpened interface effectively forms an abrupt metal‐oxide heterojunction, while the electron can still tunnel through the ultrathin AlOx to create a quantum well of 2D electron gas (2DEG). The overall performance and reliability of multilayer AOS TFT are synergistically enhanced using the proposed abrupt metal‐oxide heterojunction architecture.

A review of multi-stacked active-layer structures for solution-processed oxide semiconductor thin-film transistors

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Review of recent developments in amorphous oxide semiconductor thin-film transistor devices

Enhanced Electrical Properties of Thin-Film Transistor with Self-Passivated Multistacked Active Layers

Comprehensive Review on Amorphous Oxide Semiconductor Thin Film Transistor

Viable Approach of Tuning Oxide Semiconductor Thin Films in Solution‐Processed Heterojunction Thin Films Transistors for Both Higher Performances and Stability

Control of subthreshold swing using an in situ PEALD nano-laminated IGZO/Al2O3 multi-channel structured TFT

Boost up mobility of solution-processed metal oxide thin-film transistors via confining structure on electron pathways.

Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor

Review Article: Atomic layer deposition for oxide semiconductor thin film transistors: Advances in research and development

Addressing the Conflict between Mobility and Stability in Oxide Thin‐film Transistors

Solution-processed metal-oxide thin-film transistors: a review of recent developments

Reliability issues of amorphous oxide semiconductor-based thin film transistors

The Role of Dual-Stacked Oxide Semiconductor in High Performance Thin Film Transistors

Bi-layer channel structure-based oxide thin-film transistors consisting of ZnO and Al-doped ZnO with different Al compositions and stacking sequences

Review of recent progresses on flexible oxide semiconductor thin film transistors based on atomic layer deposition processes

Homojunction Structure Amorphous Oxide Thin Film Transistors with Ultra-High Mobility

Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimized Multi-Stacked Active-Layer Structures

Superior Atomic Layer Deposition Technology for Amorphous Oxide Semiconductor Thin-Film Transistor Memory Devices

Induced nano-scale self-formed metal-oxide interlayer in amorphous silicon tin oxide thin film transistors

Improvement of the Performance and Stability of Oxide Semiconductor Thin-Film Transistors Using Double-Stacked Active Layers