Abstract:Since the report of amorphous In-Ga-Zn-O (a-IGZO) based thin film transistors (TFTs), interest in oxide semiconductors has increased due to their high mobility, low off-current, low process temperature, and wide flexibility of compositions and processes. However, oxide semiconductors deposited by conventional processes like physical vapor deposition (PVD) leads a problematic issue to produce high-resolution displays and highly integrated memory devices due to the limited process flexibility and the poor conformality on the structured surface. Thus, a need to replace conventional deposition processes has emerged. Atomic layer deposition (ALD) is an advanced technique which could provide conformal, thickness-controlled, and high-quality thin film deposition. From these backgrounds, recently, studies on ALD based oxide semiconductors have dramatically increased. Even so, the relations of film properties of ALD-oxide semiconductors with the main variables associated with deposition and issues related to applications are still less understood than conventional one. In this review, we introduce ALD-oxide semiconductors by providing: (I) a brief history and importance of ALD-based oxide semiconductors in the industry, (II) a discussion of the value of ALD in oxide semiconductors (in-situ composition control in vertical distribution /vertical structure engineering / chemical reaction and film properties / insulator and interface engineering), and (III) an explanation of the challenging issues of scaling oxide semiconductors and ALD in industrial applications. This review provides a valuable perspective for researchers who have interest in semiconductor material and electronic devices by suggesting the reasons why ALD is important in the application of oxide semiconductors.

Superior Atomic Layer Deposition Technology for Amorphous Oxide Semiconductor Thin-Film Transistor Memory Devices

Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications

Improvement of the Charge Retention of a Non-Volatile Memory by a Bandgap-Engineered Charge Trap Layer

Outstanding Memory Characteristics with Atomic Layer Deposited Ta2O5/Al2O3/TiO2/Al2O3/Ta2O5 Nanocomposite Structures As the Charge Trapping Layer

Demonstration of Α-Ingazno TFT Nonvolatile Memory Using TiAlO Charge Trapping Layer

High-performance Amorphous In-Ga-Zn-O Thin-Film Transistor Nonvolatile Memory with a Novel P-Sno/n-sno2 Heterojunction Charge Trapping Stack

Excellent Resistive Switching Properties of Atomic Layer-Deposited Al2O3/HfO2/Al2O3 Trilayer Structures for Non-Volatile Memory Applications

Atomic Layer Deposition for Nanoscale Oxide Semiconductor Thin Film Transistors: Review and Outlook

Atomic layer deposition of multicomponent amorphous oxide semiconductors with sequential dosing of metal precursors

Novel Zn-Doped ${\rm Al}_{2}{\rm O}_{3}$ Charge Storage Medium for Light-Erasable In–Ga–Zn–O TFT Memory

Atomic-Layer-Deposited Ultrathin InAlZnO FETs-Based 2T0C DRAM Cells With Long Data Retention and Multilevel Storage

CMOS backend-of-line compatible memory array and logic circuitries enabled by high performance atomic layer deposited ZnO thin-film transistor

High-performance HfO x /AlO y -based resistive switching memory cross-point array fabricated by atomic layer deposition

Enhanced charge storage performance in AlTi4Ox/Al2O3 multilayer charge trapping memory devices

Reliability and Memory Characteristics of Sequential Laterally Solidified Low Temperature Polycrystalline Silicon Thin Film Transistors with an Oxide–Nitride–Oxide Stack Gate Dielectric

Transparent Floating Gate Memory Based on ZnO Thin Film Transistor with Controllable Memory Window

Memory Characteristics of Thin Film Transistor with Catalytic Metal Layer Induced Crystallized Indium-Gallium-Zinc-Oxide (IGZO) Channel

Remarkable Charge-Trapping Efficiency of the Memory Device with (tio2)(0.8)(al2o3)(0.1) Composite Charge-Storage Dielectric

High Performance 2T0C DRAM Cells Based on Atomic-Layer-deposited InAlZnO FETs

Reliability issues of amorphous oxide semiconductor-based thin film transistors

Comparative studies on vertical-channel charge-trap memory thin-film transistors using In-Ga-Zn-O active channels deposited by sputtering and atomic layer depositions