Abstract:Solution-processed high-kappa gate dielectrics, such as Al2O3 and HfO2, show great potential for use in low-cost electronics. However, high-temperature treatments are generally needed to cure the film, limiting the use in flexible electronics. Here we use anodization, a simple, low-cost, solution-based method, to form thin, conformal, high quality HfOx layers at room temperature. Several anodization voltages were studied, and the relative quantity of Hf-O bonding was found to increase by 10% when increasing anodization voltage from 2 to 3 V, while maintaining almost the same when further increasing the anodization voltage. Conduction mechanisms were analyzed, showing that Schottky emission dominates even for the thinnest oxides. HfOx layers formed by anodization voltages of 2, 3, and 4 V show high capacitance density of 1290, 1160, and 1060 nF/cm(2), which are equivalent to 2.68, 2.97, and 3.26 nm of thermally grown SiO2. Using such high capacitance density insulators, we fabricated InGaZnO (IGZO) thin-film transistors (TFTs) at room temperature, showing a low operating voltage of 0.5 V, one of the lowest for oxide-semiconductor-based TFTs. TFTs gated with HfOx anodized at the optimal voltage, 3 V, show a high current on/off ratio of >10(5), a mobility approaching 10 cm(2)/(V s), and a subthreshold swing as low as 69 mV/dec, close to the theoretical limit at 300 K. The interface trap density was found to be highly related to the quality of the HfOx film, showing a 50% decrease with the increase of anodization voltage from 2 to 3 V. The devices show negligible change after storage in air for 6 months and favorable stability under both positive and negative gate bias stress. Finally, we demonstrate TFTs on plastic substrates, maintaining high quality performance even under a bending radius of 9 mm. As a result, such devices have potential applications in low-cost, low-voltage-operation, low-power electronics.

Vertical Oxide Homojunction TFTs of 0.8 V Gated by $ \hbox{h}_{3}\hbox{po}_{4}$ -Treated $\hbox{sio}_{2}$ Nanogranular Dielectric

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

Low-Voltage Transparent Indium–Zinc–Oxide Coplanar Homojunction TFTs Self-Assembled on Inorganic Proton Conductors

Self-Assembled In-Plane Gate Oxide-Based Homojunction Thin-Film Transistors

High-performance IGZO-based TFTs with Stacked Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Dielectrics

One-Volt Oxide Thin-Film Transistors on Paper Substrates Gated by $\hbox{sio}_{2}$ -Based Solid Electrolyte with Controllable Operation Modes

Flexible IZO Homojunction TFTs with Graphene Oxide/Chitosan Composite Gate Dielectrics on Paper Substrates

High-Performance Indium-Gallium-Zinc-Oxide Thin-Film Transistors with Stacked Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Dielectrics

High Performance and Hysteresis-Free a-IGZO Thin Film Transistors Based on Spin-coated Hafnium Oxide Gate Dielectrics

Vertical Low-Voltage Oxide Transistors Gated by Microporous SiO2/LiCl Composite Solid Electrolyte with Enhanced Electric-Double-layer Capacitance

High-Performance Thin-Film Transistors with Sputtered IGZO/Ga₂O₃ Heterojunction

Half-volt Operation of IGZO Thin-Film Transistors Enabled by Ultrathin HfO2 Gate Dielectric

High Performance (vth ~ 0 V, SS ~ 69 Mv/dec, IOn/IOff ~ 1010) Thin-Film Transistors Using Ultrathin Indium Oxide Channel and SiO2 Passivation

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

Dual In-Plane-Gate Oxide-Based Thin-Film Transistors with Tunable Threshold Voltage

A-Igzo TFTs with Inductively Coupled Plasma Chemical Vapor Deposited ${\rm SiO}_{x}$ Gate Dielectric

Solution-Processed HfOx for Half-Volt Operation of InGaZnO Thin-Film Transistors

Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated By Sio2-Based Solid Electrolyte

Microporous SiO2 with Huge Electric-Double-layer Capacitance for Low-Voltage Indium Tin Oxide Thin-Film Transistors

Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated by $\Hbox{sio}_{2}$-Based Solid Electrolyte

One-Volt IGZO Thin-Film Transistors with Ultra-Thin, Solution-Processed Al X O Y Gate Dielectric