Abstract:We report on a healing of defects at room temperature in the organic semiconductor pentacene. This peculiar effect is a direct consequence of the weak intermolecular interaction which is characteristic of organic semiconductors. Pentacene thin-film transistors were fabricated and characterized by in situ gated four-terminal measurements. Under high vacuum conditions (base pressure of order 10E-8 mbar), the device performance is found to improve with time. The effective field-effect mobility increases by as much as a factor of two and mobilities up to 0.45 cm2/Vs were achieved. In addition, the contact resistance decreases by more than an order of magnitude and there is a significant reduction in current hysteresis. Oxygen/nitrogen exposure and annealing experiments show the improvement of the electronic parameters to be driven by a thermally promoted process and not by chemical doping. In order to extract the spectral density of trap states from the transistor characteristics, we have implemented a powerful scheme which allows for a calculation of the trap densities with high accuracy in a straightforward fashion. We show the performance improvement to be due to a reduction in the density of shallow traps <0.15 eV from the valence band edge, while the energetically deeper traps are essentially unaffected. This work contributes to an understanding of the shallow traps in organic semiconductors and identifies structural point defects within the grains of the polycrystalline thin films as a major cause.

Research on Operating Degradation of Pentacene Thin-Film Transistors

Fabrication of Pentacene Thin-Film Transistors with Patterned Polyimide Photoresist As Gate Dielectrics and Research of Their Degradation

The Hot-Carrier-Induced Degradation of Soi Ligbt under Ac Stress Conditions

Phototransistor Properties of Pentacene Organic Transistors with Poly(methyl Methacrylate) Dielectric Layer

Performance of Pentacene Thin Film Transistors Fabricated with Different Deposition Speeds

H 2 O Effect on the Stability of Organic Thin-Film Field-Effect Transistors

Variation of Different Characteristic Parameters of Pentacene/Poly(Methyl Methacrylate) Transistors under Electric Stress

Electrical Characteristics of Pentacene Thin Film Transistors in Volatile Compound Vapors

Effects of film morphology and gate dielectric surface preparation on the electrical characteristics of organic-vapor-phase-deposited pentacene thin-film transistors

Ba0.6Sr0.4TiO3 Thin Films Used As Gate Dielectric in Pentacene Transistors

Pentacene Field-Effect Transistors with Sub-10-nm Channel Lengths

Pentacene Thin-Film Transistors with Ta2o5 As the Gate Dielectric

Low-Voltage Organic Thin-Film Transistors with Improved Stability and Large Transconductance

Oxygen effect on the electrical characteristics of pentacene transistors

Enhancement of Memory Properties of Pentacene Field-Effect Transistor by the Reconstruction of an Inner Vertical Electric Field with an N-Type Semiconductor Interlayer.

Deep-trap dominated degradation of the endurance characteristics in OFET memory with polymer charge-trapping layer

Effect of Impurities on Pentacene Thin Film Growth for Field-Effect Transistors

Defect healing at room temperature in pentacene thin films and improved transistor performance

Enhancing the Electrical and Thermal Stability of Organic Thin-Film Transistors by Utilizing Fluorinated Polyimide and Silicon Dioxide Bilayer Gate Dielectric

Improved Performance Of P-Type Pentacene Thin Film Transistor By Inserting Thin Interlayer Of N-Type Organic Semiconductor

Interfacial Modification And Memory Effect In Pentacene-Based Phototransistors