Oxygen effect on the electrical characteristics of pentacene transistors

Yan Hu,Guifang Dong,Yuanchuan Hu,Liduo Wang,Yong Qiu
DOI: https://doi.org/10.1088/0022-3727/39/21/007
2006-01-01
Abstract:The effect of oxygen on the electrical characteristics of organic thin film transistors with pentacene as the active layer has been investigated. The saturation currents and mobilities of the transistors increase as the ambient oxygen concentration decreases, which is ascribed to the formation of a charge transfer complex between pentacene and O-2. The deposition rate of the pentacene layer affects this phenomenon. The transistor with the pentacene layer deposited at a rate of 15 nm min(-1) shows higher sensitivity to oxygen concentration than the device with the pentacene layer deposited at 30 nm min(-1). We suggest that when deposited at a lower rate the pentacene film is less compact, leading to easier entrance of oxygen into the charge accumulation regio
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