Abstract:In this article, laser scanning annealing is used for the fabrication of solution-processed tungsten-zinc-tin-oxide thin-film transistors (WZTO TFTs) with low temperatures and fast processing. The high-transient intensity of the scanning laser is beneficial to the effective conversion of precursors to metal-oxide lattices, which is also verified by the X-ray photoelectron spectroscopy analysis. Moreover, no apparent phase transformation and lattice expansion exist during laser irradiation of stable amorphous structures of a-WZTO thin films, as observed from the results of X-ray diffraction, Raman scattering spectroscopy, and transmission electron microscopy. Based on laser scanning techniques, the large optical band gap (3.88 eV) is an important factor to realize a high optical performance of WZTO TFTs. The solution-processed WZTO TFT with laser scanning annealing exhibits much better performance with high mobility (up to 4.99 cm(2) V-1 s(-1)), compared to that with thermal annealing (1.27 cm(2) V-1 s(-1)). More importantly, this method is applicable for a wide range of metal-oxide semiconductors and polymer substrates, by solving the incompatibility between solution-processed metal-oxide semiconductors and polymer substrates because of high processing temperatures. Therefore, it shows tremendous potential to be applicable for a wide range of sensors, displays, and circuits. These results demonstrated that the laser scanning annealing provides a promising tool to simplify the fabrication of low-temperature polycrystalline oxide TFTs, when simultaneously utilizing the metal-oxide-semiconductor TFT and low-temperature polycrystalline silicon TFT processes with low cost and high yield.

Improvement of Performance of Organic Thin-Film Transistors Through Zone Annealing

Effects of Annealing Process on Characteristics of Fully Transparent Zinc Tin Oxide Thin-Film Transistor

Improving the Performance of Aligned Carbon Nanotube-Based Transistors by Refreshing the Substrate Surface.

Inverted annealing enhanced performance of organic thin-film transistors and phototransistors based on 2-(4-dodecylphenyl) [1]benzothieno[3,2-b]benzothiophene

Improved Performance Of P-Type Pentacene Thin Film Transistor By Inserting Thin Interlayer Of N-Type Organic Semiconductor

Improved Performance of Organic Thin Film Transistor with an Inorganic Oxide/Polymer Double-Layer Insulator

Mobility Enhancement and OFF Current Suppression in Atomic-Layer-Deposited ZnO Thin-Film Transistors by Post Annealing in O2

Effects of film morphology and gate dielectric surface preparation on the electrical characteristics of organic-vapor-phase-deposited pentacene thin-film transistors

Improved carrier mobility of pentacene organic TFTs by suppressed oxide growth at remote interface using nitrogen doping in high-k NdNbO dielectric

Reduced Contact Resistance in Solution-Processed Phenylenevinylene-Based Copolymer Thin-Film Transistors Using Annealing-Induced Morphological Variation

High-Performance Organic Field-Effect Transistors of Liquid Crystalline Organic Semiconductor by Laser Mapping Annealing

Performance Improvement of In-Ga-Zn Oxide Thin-Film Transistors by Excimer Laser Annealing

Improving the Performance of Organic Thin-Film Transistor with a Doped Interlayer

Ba0.6Sr0.4TiO3 Thin Films Used As Gate Dielectric in Pentacene Transistors

Zone‐Annealing‐Assisted Solvent‐Free Processing of Complementary Semiconducting Polymer Blends for Organic Field‐Effect Transistors

Characteristic Enhancement of Solution-Processed In–Ga–Zn Oxide Thin-Film Transistors by Laser Annealing

Enhancing the Performance of Solution-Processed Thin-Film Transistors Via Laser Scanning Annealing

Performance Improvement of Atomic Layer-Deposited ZnO/Al2O3Thin-Film Transistors by Low-Temperature Annealing in Air

High Performance of Patterned Solution-Processed WZnSnO Thin Film Transistor Using Fiber-Coupler Semiconductor Laser Annealing

Defect healing at room temperature in pentacene thin films and improved transistor performance

Defect Modification in Zninsno Transistor with Solution-Processed Al2o3 Dielectric by Annealing