Reduced Contact Resistance in Solution-Processed Phenylenevinylene-Based Copolymer Thin-Film Transistors Using Annealing-Induced Morphological Variation

Lin Chen,Hao Xu,Li-Gong Yang,Guo-Qiang Zhang,Yang Li,Mang Wang,Hong-Zheng Chen
DOI: https://doi.org/10.1088/0022-3727/44/11/115101
2011-01-01
Abstract:A significant (about 10-fold) reduction in contact resistance in top-contact poly[divinyl-bis(hexyloxy)benzene-alt-diketopyrrolopyrrole] thin-film transistors was realized by changing the microscopic morphology of Au/polymer interface through thermal annealing. An enhancement of roughness was caused by the variation of molecular stacking, as confirmed by x-ray diffraction spectra. The influences of roughness variation on the mobility-dependent contact resistances were compared, and a more than 10-fold increase in linear field-effect mobility was obtained in annealed devices, approaching 10−3 cm2 V−1 s−1. Further analysis showed that the increased density of local states and better bulk transport near the contact interface, which resulted from the enhanced surface roughness, should be responsible for this improvement.
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