Abstract:The ability to modulate the polymorphism of semiconducting conjugated polymers (CPs) renders the scrutiny of the correlation between their molecular structure and charge transport characteristics. Surprisingly, investigation into the control over polymorphism to boost the charge mobility is few and limited in scope. Herein, we report, for the first time, two distinct polymorphisms in conjugated poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT) thin films, the transformation between them via thermal and solvent vapor annealing, and the correlation of the respective polymorphism to charge transport properties. Specifically, a series of PBTTTs with different alkyl side chains (i.e., hexyl, octyl, decyl, and dodecyl; denoted PBTTT-6, PBTTT-8, PBTTT-10, and PBTTT-12, respectively) and molecular weights (MWs) are synthesized and their polymorphisms are examined by varying both the intrinsic (i.e., alkyl side-chain lengths and MWs) and extrinsic (i.e., thermal and solvent vapor annealing) parameters. Initially, type II (i.e., possessing a smaller interlayer spacing along the alkyl side-chain direction) exists in all as-cast PBTTT films. Upon thermal annealing at different temperatures (150 and 250 degrees C), PBTTT-6 and PBTTT-8 with shorter alkyl side chains and low MWs favor the transition from type II to type I (i.e., experiencing a larger interlayer spacing). Intriguingly, the type I PBTTT can be readily reverted to type II via subsequent solvent vapor annealing, and such polymorphism transition is highly reversible. The kinetics of the polymorphism transformation as well as the accompanied change in molecular stacking are elucidated. Finally, the charge transport properties of PBTTT thin films are found to depend sensitively on their crystalline structures, including the polymorphism change. This study provides insights into the control over the PBTTT polymorphisms and their intertransition via synergetic intrinsic molecular engineering and extrinsic post treatments.

Controlling contact resistance in top-gate polythiophene-based field-effect transistors by molecular engineering

Improvement of the poly-3-hexylthiophene transistor performance using small molecule contact functionalization

Interfacial Engineering for High-Performance DPPT-TT Polymer Transistors with the On/Off Ratio of 108 and Mobility of 3 Cm2v−1s−1

Modulating Contact Properties by Molecular Layers in Organic Thin‐film Transistors

Tuning Interfacial Properties by Spontaneously Generated Organic Interlayers in Top‐Contact‐Structured Organic Transistors

Reduced Contact Resistance in Solution-Processed Phenylenevinylene-Based Copolymer Thin-Film Transistors Using Annealing-Induced Morphological Variation

Reduced contact resistance in top-contact organic field-effect transistors by interface contact doping

Controllable Growth of P3HT Single-Crystal Films for Organic Field-Effect Transistors

C8‐BTBT‐C8 Thin‐Film Transistors Based on Micro‐Contact Printed PEDOT:PSS/MWCNT Electrodes

Interface engineering to enhance charge carrier injection in Ph-BTBT-10 organic thin-film transistor with silver source-drain electrodes

Schottky-Barrier-Dependent Electrical Characteristics in Conjugated Polymer Transistors with Various Contact Metals

Meticulous Molecular Engineering of Crystal Orientation and Morphology in Conjugated Polymer Thin Films for Field-Effect Transistors

A simple and robust approach to reducing contact resistance in organic transistors

Temperature-dependent contact resistances in high-quality polymer field-effect transistors

Tunable contact resistance in double-gate organic field-effect transistors

MoTe2 Field-Effect Transistors with Low Contact Resistance through Phase Tuning by Laser Irradiation

Interrogating Polymorphism in Conjugated Poly(thieno)thiophene Thin Films for Field-Effect Transistors

Controllable Hysteresis and Threshold Voltage of Single-Walled Carbon Nano-tube Transistors with Ferroelectric Polymer Top-Gate Insulators

Interfacial charge transfer in nanoscale polymer transistors

Ultralow contact resistance in organic transistors via orbital hybridization

Improving the Performance of Organic Thin-Film Transistor with a Doped Interlayer