Ultrathin organic transistors on oxide surfaces

Maren Daraktchiev,Adrian von Mühlenen,Frank Nüesch,Michel Schaer,Martin Brinkmann,Marie-Noëlle Bussac,Libero Zuppiroli
DOI: https://doi.org/10.1088/1367-2630/7/1/133
2005-05-24
New Journal of Physics
Abstract:We have built a model organic field-effect transistor that is basically composed of a single layer of pentacene crystal in interaction with an oxide surface. Drain and source contacts are ohmic so that the pentacene layer can carry a current density as high as 3000 A cm−2 at a gate voltage of –60 V. Four-probe and two-probe transport measurements as a function of temperature and fields are presented in relation with structural near-field observations. The experimental results suggest a simple two-dimensional model where the equilibrium between free and trapped carriers at the oxide interface determines the OFET characteristics and performance.
physics, multidisciplinary
What problem does this paper attempt to address?