High-Performance Low-Cost Organic Field-Effect Transistors With Chemically Modified Bottom Electrodes

Chong-an Di,Gui Yu,Yunqi Liu,Xinjun Xu,Dacheng Wei,Yabin Song,Yanming Sun,Ying Wang,Daoben Zhu,Jian Liu,Xinyu Liu,Dexin Wu
DOI: https://doi.org/10.1021/ja066092v
IF: 15
2006-01-01
Journal of the American Chemical Society
Abstract:The characteristics of organic field-effect transistors (OFETs) were dramatically improved by chemically modifying the surface of the bottom-contact Ag or Cu source-drain (D-S) electrodes with a simple solution method. The contact resistance and energetic mismatch typically observed with Ag D-S electrodes in pentacene bottom-contact OFETs can be properly eliminated when modified by the Ag-TCNQ (TCNQ = 7,7,8,8-tetracyanoquinodimethane). The pentacene transistors with low-cost Ag-TCNQ-modified Ag bottom-contact electrodes exhibit outstanding electrical properties, which are comparable with that of the Au top-contact devices. It thus provides a novel way toward high-performance low-cost bottom-contact OFETs.
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