High-Performance Ultra-Low-Power OFET Based on Anodized TiOx Dielectric and Solution-sheared Organic Single Crystal

Bowen Geng,Feng Zhang,Xiaohai Ding,Lei Liu,Yan Chen,Shuming Duan,Xiaochen Ren,Wenping Hu,Bowen Gen
DOI: https://doi.org/10.1039/d3tc01205k
IF: 6.4
2023-08-02
Journal of Materials Chemistry C
Abstract:Organic field-effect transistors (OFETs) are promising building blocks in wearable electronics applications due to their low processing temperature and mechanical flexibility. For such applications, the OFETs are expected to operate at a low voltage, within the range of portable batteries. Anodized TiOx dielectric is a promising method for reducing power consumption by decreasing the saturation gate voltage of OFETs, but this often leads to poor OFET performance due to large surface roughness. This work presents an optimized solution for achieving ultra-low-power (below 1 V) device operation using anodized TiOx/PS hybrid dielectric combined with a solution-sheared organic single crystal thin film. The anodized TiOx provides a high unit-area capacitance up to 2500 nF cm-2 with good uniformity, while the organic single crystal thin film achieves high carrier mobility of 4.5 cm2 V-1 s-1 and low threshold voltage of 0.13 V. The use of PS layer and TiOx as the gate dielectric demonstrates a systematic optimization of OFETs and its great potential for developing high-performance, ultra-low-power organic circuit applications.
materials science, multidisciplinary,physics, applied
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