Abstract:The successful commercialization of organic field‐effect transistors (OFETs) for advanced integrated organic electronics requires reducing device sizes, which inevitably clashes with the constraints imposed by the contact effects. Herein, it is demonstrated that the contact resistance in OFETs based on monolayer organic semiconductors is extremely low, especially at mild biasing conditions. The contributions of the access resistance and the metal–organic interface resistance are successfully disentangled for the first time. It is shown that, contrary to the conventional view, the contact resistance of monolayer OFETs in the saturation regime exhibits a very weak dependence on the source electrode length. In the monolayer OFETs based on 2,9‐didecyldinaphtho[2,3‐b:2’,3’‐f]thieno[3,2‐b]thiophene (C10‐DNTT), a gate‐voltage‐independent access resistivity (2.2 × 10−2 Ω cm2) at VDS = −1 mV is obtained, while the interfacial metal–organic Schottky contact resistance is found to be negligible. The depletion of a diode associated with the metal–organic interface expands with increasing VDS and eventually bottlenecks the device performance. Finally, how to overcome such a carrier depletion contact resistance bottleneck and achieve OFETs with outstanding performance are shown. These findings pave the way toward sophisticated organic electronic applications based on the use of monolayer OFETs. Herein, the contact resistance is studied in monolayer organic transistors with van der Waals electrodes. The contact resistivity reveals no gate‐dependent behavior under low drain‐source bias while the reverse diode in the metal–organic interface becomes dominated when drain‐source bias increases. Herein, a deep insight into the contact resistance of the monolayer organic transistors is provided.

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High Performance Organic Field-Effect Transistor with Oxide/Metal Bilayer Electrodes

Reducing contact resistance in bottom contact organic field effect transistors for integrated electronics

Top Contact Pentacene Based Organic Thin Film Transistor with Bi-layer TiO2Electrodes

Contact Effect in Organic Thin Film Transistors

Mobility Enhancement Of Top Contact Pentacene Based Organic Thin Film Transistor With Bi-Layer Geo/Au Electrodes

Tuning the Contact Resistance in Organic Thin-Film Transistors with an Organic–inorganic Hybrid Interlayer

Pentacene Field-Effect Transistors with Sub-10-nm Channel Lengths

The Origin of Low Contact Resistance in Monolayer Organic Field‐Effect Transistors with van der Waals Electrodes

Poly(3,3‴-didodecylquarterthiophene) Field Effect Transistors with Single-Walled Carbon Nanotube Based Source and Drain Electrodes

Efficient modification of Cu electrode with nanometer-sized copper tetracyanoquinodimethane for high performance organic field-effect transistors.

Improved Performance of Top Contact Organic Thin Film Transistors with Bilayer WO3/Au Electrodes

High‐Performance Bottom‐Contact Organic Thin‐Film Transistors with Controlled Molecule‐Crystal/Electrode Interface

Fabrication of Top-Contact Pentacene-Based Organic Thin-Film Transistors with Short Channels Using Two-Step SU8/poly(vinyl Alcohol) Lift-off Photolithography Process

Study of Contact Resistance of High-Mobility Organic Transistors Through Comparisons

Ultralow contact resistance in organic transistors via orbital hybridization

The Performance Improvement in Pentacene Organic Thin Film Transistors by Inserting C-60/Moo3 Ultrathin Layers

Heterojunction Effect on Contact Resistance Minimization in Staggered Pentacene Thin-Film Transistors