Patterned Graphene As Source/Drain Electrodes for Bottom‐Contact Organic Field‐Effect Transistors

Chong-an Di,Dacheng Wei,Gui Yu,Yunqi Liu,Yunlong Guo,Daoben Zhu
DOI: https://doi.org/10.1002/adma.200800150
IF: 29.4
2008-01-01
Advanced Materials
Abstract:Graphene, which is a basic building, block of graphite, fullerene, and carbon nanotubes, is patterned effectively by a simple approach involving vapor deposition on Cu or Ag electrodes that were patterned on a highly n-doped silicon wafer with a thermally oxidized SiO2 dielectric layer (see figure). The patterned graphene could serve as excellent bottom-contact electrodes for high-performance organic field-effect transistors.
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