Abstract:As an emerging material, graphene has attracted vast interest in solid-state physics, materials science, nanoelectronics and bioscience. Graphene has zero bandgap with its valence and conduction bands are cone-shaped and meet at the K points of the Brillouin zone. Due to its high intrinsic carrier mobility, large saturation velocity, and high on state current density, graphene is also considered as a promising candidate for high-frequency devices. To improve the reliability of graphene FETs, which include shifting the Dirac point voltage toward zero, increasing the channel mobility and decreasing the source/drain contact resistance, we optimized the device fabrication process. For CVD grown graphene, the film transfer and the device fabrication processes may produce interfacial states between graphene and the substrate and make graphene p or n-type, which shift the fermi level far away from the Dirac point. We have found that after graphene film transfer, an annealing process at 400°C under N2 ambient will shift Dirac point toward zero gate voltage. Ti/Au, Ni, and Ti/Pd/Au source/drain structures have been studied to minimize the contact resistance. According to the measured data, Ti/Pd/Au structure gives the lowest contact resistance (∼500ohmμm). By controlling the process of graphene growth, transfer and device fabrication, we have achieved graphene FETs with a field effective mobility of 16,000cm2/Vs after subtraction of contact resistance. The contact resistivity was estimated in the range of 1.1×10−6Ωcm2 to 8.8×10−6Ωcm2, which is close to state of the art III–V technology. The maximum transconductance was found to be 280mS/mm at VD=0.5V, which is the highest value among CVD graphene FETs published to date.

Charge Focusing and Enhanced Fermi-Level Modulation in Hybrid Graphene Nanospike Organic Thin-Film Transistors

Nanospike electrodes and charge nanoribbons: A new design for nanoscale thin-film transistors

Nanospike Electrode Designs for Improved Electrical Performance in Nanoscale Organic Thin-Film Transistors

Planar Nanoscale Architecture for Organic Thin-Film Field-Effect Transistors

Linear Tuning of Charge Carriers in Graphene by Organic Molecules and Charge-Transfer Complexes

Partially-Screened Field Effect and Selective Carrier Injection at Organic Semiconductor / Graphene Heterointerface.

Ultrahigh Mobility and Efficient Charge Injection in Monolayer Organic Thin-Film Transistors on Boron Nitride.

Linear conduction in N-type organic field effect transistors with nanometric channel lengths and graphene as electrodes

High-Performance Photoresponsive Organic Nanotransistors with Single-Layer Graphenes as Two-Dimensional Electrodes

Tuning Ambipolarity in a Polymer Field Effect Transistor using Graphene electrodes

High-performance monolayer MoS2 field-effect transistor with large-scale nitrogen-doped graphene electrodes for Ohmic contact

Charge‐Transfer‐Controlled Growth of Organic Semiconductor Crystals on Graphene

Patterned Graphene As Source/Drain Electrodes for Bottom‐Contact Organic Field‐Effect Transistors

Quasi-1-Dimensional Dual-Gate MoS 2 Field-Effect Transistors with 50 nm Channel Length

Reduced contact resistance in top-contact organic field-effect transistors by interface contact doping

Enhancing device characteristics of pentacene-based organic transistors through graphene integration: A simulation study and performance analysis

Optimizing the fabrication process for high performance graphene field effect transistors.

Enhancing IGZO Thin Film Transistor Scalability Through Tunneling Contact

High-Yield, Scaling-Up Fabrication of Fermi-Level-Pinning-Free Organic Thin-Film Transistor Arrays with Printed Van der Waals Contacts

Lowering the Contact Barriers of 2D Organic F 16 CuPc Field‐Effect Transistors by Introducing Van der Waals Contacts

C8‐BTBT‐C8 Thin‐Film Transistors Based on Micro‐Contact Printed PEDOT:PSS/MWCNT Electrodes