Tetramethylpentacene: Remarkable Absence of Steric Effect on Field Effect Mobility

H Meng,M Bendikov,G Mitchell,R Helgeson,F Wudl,Z Bao,T Siegrist,C Kloc,CH Chen
DOI: https://doi.org/10.1002/adma.200304935
IF: 29.4
2003-01-01
Advanced Materials
Abstract:A new pentacene derivative, 2,3,9,10‐tetramethyl‐pentacene (Me4PENT), has been synthesized, characterized, and tested in a field‐effect transistor (FET) device (see Figure). A bottom‐contact‐mode FET device fabricated with Me4PENT was shown to exhibit a high charge‐transport mobility of 0.31 cm2 V–1 s–1 when fabricated at a deposition substrate temperature of 85 °C.
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