Abstract:Bottom-gated pentacene organic thin-film transistors (OTFTs) with NdTaON as high-k gate dielectric have been fabricated on substrates with different resistivities: 0.005 Omega.cm, 0.3 similar to 0.9 Omega.cm, and 1 similar to 5 Omega.cm for n-Si wafers, and 35 Omega/sq for ITO-coated glass. On the three n-Si substrates, the dielectric surface roughness and pentacene grain size are nearly the same, but the carrier mobility of the OTFTs show an obvious increase with decreasing resistivity, indicating that the gate electron concentration can affect the device performance. Despite the much larger dielectric surface roughness and smaller pentacene grain size, the OTFT on the ITO-coated glass shows the highest carrier mobility. These effects are attributed to remote phonon scattering on the channel carriers, which has been strongly screened by the electrons in the gate electrode. According to the measurement on the mobility degradation at high temperature, the remote phonon scattering is determined to be the dominant factor affecting the carrier mobility. As a result, the OTFT on ITO glass can achieve a high carrier mobility of 2.43 cm(2)/V.s and a small threshold voltage of -0.10 V.

A Study on Pentacene Organic Thin-Film Transistor with Different Gate Materials on Various Substrates

Effects of Gate Electron Concentration on the Performance of Pentacene Organic Thin-Film Transistors

High-Performance Pentacene Organic Thin-Film Transistor Based on Room-Temperature- Processed Hf0.13La0.87O As Gate Dielectric

High-mobility Pentacene Organic Thin-Film Transistors Achieved by Reducing Remote Phonon Scattering and Surface-Roughness Scattering

High-mobility Pentacene Thin-Film Transistor by Using LaxTa(1−x)Oy As Gate Dielectric

High-Performance Pentacene Thin-Film Transistor with High- $\kappa$ HfLaON As Gate Dielectric

A Study on Organic Thin-Film Transistors Using Hf–La Oxides with Different La Contents As Gate Dielectrics

High-performance Pentacene OTFT by Incorporating Ti in LaON Gate Dielectric

Improvement of Pentacene Organic Thin-Film Transistor by Using Fluorine Plasma-Treated or Ion-Implanted HfO 2 As Gate Dielectric

Pentacene Organic Thin-Film Transistor with Hfyo Gate Dielectric Made on Adhesive Vacuum Tape

High-performance Organic Thin-Film Transistor by Using LaNbO As Gate Dielectric

High-Mobility Pentacene Organic Thin-Film Transistor with La X Nb (1– X ) O Y Gate Dielectric Fabricated on Vacuum Tape

High-mobility Pentacene OTFT with TaLaO Gate Dielectric Passivated by Fluorine Plasma

High-Performance Pentacene Organic Thin-Film Transistor by Using Nd2O3 Gate Dielectric Doped with Nb

Pentacene Thin-Film Transistors with Ta2o5 As the Gate Dielectric

Transparent Pentacene Organic Thin Film Transistors with Polyimide Dielectrics

Ba0.6Sr0.4TiO3 Thin Films Used As Gate Dielectric in Pentacene Transistors

Effect of Inserting Teflon As A Surface Modification Layer on Bottom-Contact Pentacene-Based Organic Thin-Film Transistors

Effects of source/drain-electrode material, thickness and fabrication method on the electrical performance of pentacene thin-film transistor

High Performance Low-Voltage Organic Field-Effect Transistors Enabled by Solution Processed Alumina and Polymer Bilayer Dielectrics

Improved Performance of Organic Thin Film Transistor with an Inorganic Oxide/Polymer Double-Layer Insulator