Abstract:High quality thermal robust CVD-HfO/sub 2/ gate dielectrics with HfN electrodes were fabricated. The scalability of the HfN/HfO/sub 2/ gate stack and the integration issues with CMOS devices were systematically investigated. The equivalent oxide thickness (EOT) is aggressively scaled down to 0.65 nm with low gate leakage and excellent reliability characteristics. High performance HfN/HfO: gated nMOSFET with 0.95 nm EOT was fabricated by using a gate-first process compatible with standard CMOS process flow. Significantly improved effective electron mobility is achieved in the device. The improved mobility is related to a high temperature post annealing process after HfO/sub 2/ deposition in the gate-first process such as the S/D activation annealing, which could effectively reduce the charge traps in HfO/sub 2/ films. A dual metal gate integration process for HfO/sub 2/ CMOS devices is demonstrated using a HfN dummy metal layer. In the process, the dummy HfN metal gate electrode was selectively removed from high-temperature annealed HfN/HfO: gate stack by diluted hydrofluoric without causing any degradation to the underlying HfO/sub 2/ gate dielectrics. Then two other metals with appropriate work functions for dual-gate CMOS, such as Ta for n-MOS and Ni for p-MOS were then re-deposited on HfO/sub 2/ as the new gate electrodes. The resulting n- and p-MOS devices show a work function difference of -0.8 eV.

High-Performance Pentacene Thin-Film Transistor with High- $\kappa$ HfLaON As Gate Dielectric

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

Improved carrier mobility of pentacene organic TFTs by suppressed oxide growth at remote interface using nitrogen doping in high-k NdNbO dielectric

Low-voltage Organic Field-Effect Transistors Based on Novel High-Κ Organometallic Lanthanide Complex for Gate Insulating Materials

Improved Performance Of P-Type Pentacene Thin Film Transistor By Inserting Thin Interlayer Of N-Type Organic Semiconductor

Planar Nanoscale Architecture for Organic Thin-Film Field-Effect Transistors

Pentacene Thin-Film Transistors with Ta2o5 As the Gate Dielectric

Improving the Performance of the Organic Thin-Film Transistors with Thin Insulating Lithium Fluoride Buffer Layer

Transparent Pentacene Organic Thin Film Transistors with Polyimide Dielectrics

Flexible Low-Voltage Organic Thin-Film Transistors Enabled by Low-Temperature, Ambient Solution-Processable Inorganic/Organic Hybrid Gate Dielectrics

Comparison of Hfalo, Hfo2/Al2o3, and Hfo2 on N-Type Gaas Using Atomic Layer Deposition

Ultrathin Hfo2(Eot < 0.75nm) Gate Stack With Tan/Hfn Electrodes Fabricated Using A High-Temperature Process

Improved Performance of Organic Thin Film Transistor with an Inorganic Oxide/Polymer Double-Layer Insulator

A Low-Temperature, Solution-Processed High-K Dielectric for Low-Voltage, High-Performance Organic Field-Effect Transistors (Ofets)

Low Temperature Organic Thin-Film Transistor Based On Tantalum Pentoxide Prepared By Anodization

Nanocluster-Based Ultralow-Temperature Driven Oxide Gate Dielectrics for High-Performance Organic Electronic Devices

Characterization of high-kappa nanolaminates of HfO2 and Al2O3 used as gate dielectrics in pMOSFETs

Charactcristics Of Sub-1 Nm Cvid Hfo2 Gate Dielectrics With Hfn Electrodcs For Advanccd Cmos Applications

Characteristics of sub-1 nm CVD HfO/sub 2/ gate dielectrics with HfN electrodes for advanced CMOS applications

Polysiloxane-Poly(Vinyl Alcohol) Composite Dielectrics For High-Efficiency Low Voltage Organic Thin Film Transistors

Low-voltage high-performance C60 thin film transistors via low-surface-energy phosphonic acid monolayer/hafnium oxide hybrid dielectric