Abstract:Pentacene organic TFTs (OTFTs) using high-k Nd2O3 doped with niobium and/or nitrogen as gate dielectric have been fabricated with gate-dielectric annealing at 200 °C and 400 °C. For 400 °C, the OTFT with only niobium doping in the Nd2O3 gate dielectric shows an obvious improvement in carrier mobility compared with its counterpart with pure Nd2O3 as gate dielectric. Moreover, for the lower temperature of 200 °C, the OTFT with both niobium and nitrogen dopings in the Nd2O3 gate dielectric achieves further improvement with a small threshold voltage of −0.79 V and a high carrier mobility of 2.24 cm2/V·s. AFM and XPS reveal that the nitrogen doping, like the niobium doping, can reduce the hygroscopicity of Nd2O3, leading to a smoother surface of dielectric and thus larger overlying pentacene grains for reducing the scatterings of surface roughness and grain boundary respectively. Besides, highest mobility is achieved for the NdNbON gate dielectric without the best film quality because with nitrogen doping and lower-temperature annealing, a thinner interlayer between the gate dielectric and the Si gate is formed to enhance the electrostatic coupling between them, thus suppressing the phonon scattering on channel carriers caused by the thermal oscillation of the atoms inside the gate dielectric.

High-performance Organic Thin-Film Transistor by Using LaNbO As Gate Dielectric

High-Mobility Pentacene Organic Thin-Film Transistor with La X Nb (1– X ) O Y Gate Dielectric Fabricated on Vacuum Tape

High-Performance Pentacene Organic Thin-Film Transistor by Using Nd2O3 Gate Dielectric Doped with Nb

High-mobility Pentacene Thin-Film Transistor by Using LaxTa(1−x)Oy As Gate Dielectric

A Study on Organic Thin-Film Transistors Using Hf–La Oxides with Different La Contents As Gate Dielectrics

High-performance Pentacene OTFT by Incorporating Ti in LaON Gate Dielectric

High-Performance Pentacene Thin-Film Transistor with High- $\kappa$ HfLaON As Gate Dielectric

High-Performance Pentacene Organic Thin-Film Transistor Based on Room-Temperature- Processed Hf0.13La0.87O As Gate Dielectric

A Study on La Incorporation in Transition-Metal (Y, Zr, and Nb) Oxides as Gate Dielectric of Pentacene Organic Thin-Film Transistor

High-mobility Pentacene Organic Thin-Film Transistors Achieved by Reducing Remote Phonon Scattering and Surface-Roughness Scattering

A Study on Pentacene Organic Thin-Film Transistor with Different Gate Materials on Various Substrates

High-mobility Pentacene OTFT with TaLaO Gate Dielectric Passivated by Fluorine Plasma

Improved carrier mobility of pentacene organic TFTs by suppressed oxide growth at remote interface using nitrogen doping in high-k NdNbO dielectric

Effects of Gate Electron Concentration on the Performance of Pentacene Organic Thin-Film Transistors

Carrier-Mobility Improvement for Pentacene Otft with Lazro Dielectric by Using Pd Gate

Improved Performance Of P-Type Pentacene Thin Film Transistor By Inserting Thin Interlayer Of N-Type Organic Semiconductor

Planar Nanoscale Architecture for Organic Thin-Film Field-Effect Transistors

Low-voltage Organic Field-Effect Transistors Based on Novel High-Κ Organometallic Lanthanide Complex for Gate Insulating Materials

High-performance Pentacene Thin-Film Transistor with ZrLaO Gate Dielectric Passivated by Fluorine Incorporation

Improvement of Pentacene Organic Thin-Film Transistor by Using Fluorine Plasma-Treated or Ion-Implanted HfO 2 As Gate Dielectric

Effects of fluorine plasma and ammonia annealing on pentacene thin-film transistor with ZrLaOx as gate dielectric