Abstract:Pentacene organic TFTs (OTFTs) using high-k Nd2O3 doped with niobium and/or nitrogen as gate dielectric have been fabricated with gate-dielectric annealing at 200 °C and 400 °C. For 400 °C, the OTFT with only niobium doping in the Nd2O3 gate dielectric shows an obvious improvement in carrier mobility compared with its counterpart with pure Nd2O3 as gate dielectric. Moreover, for the lower temperature of 200 °C, the OTFT with both niobium and nitrogen dopings in the Nd2O3 gate dielectric achieves further improvement with a small threshold voltage of −0.79 V and a high carrier mobility of 2.24 cm2/V·s. AFM and XPS reveal that the nitrogen doping, like the niobium doping, can reduce the hygroscopicity of Nd2O3, leading to a smoother surface of dielectric and thus larger overlying pentacene grains for reducing the scatterings of surface roughness and grain boundary respectively. Besides, highest mobility is achieved for the NdNbON gate dielectric without the best film quality because with nitrogen doping and lower-temperature annealing, a thinner interlayer between the gate dielectric and the Si gate is formed to enhance the electrostatic coupling between them, thus suppressing the phonon scattering on channel carriers caused by the thermal oscillation of the atoms inside the gate dielectric.

Effects of fluorine plasma and ammonia annealing on pentacene thin-film transistor with ZrLaOx as gate dielectric

Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application

High-performance Pentacene Thin-Film Transistor with ZrLaO Gate Dielectric Passivated by Fluorine Incorporation

Effects of Annealing Process on Characteristics of Fully Transparent Zinc Tin Oxide Thin-Film Transistor

Improvement of Pentacene Organic Thin-Film Transistor by Using Fluorine Plasma-Treated or Ion-Implanted HfO 2 As Gate Dielectric

High-Performance Pentacene Thin-Film Transistor with High- $\kappa$ HfLaON As Gate Dielectric

High-performance Organic Thin-Film Transistor by Using LaNbO As Gate Dielectric

N2O-plasma Effect on Low-Temperature Deposited Gate Dielectric for Organic Thin-Film Transistors

A Study on Organic Thin-Film Transistors Using Hf–La Oxides with Different La Contents As Gate Dielectrics

A Study on Pentacene Organic Thin-Film Transistor with Different Gate Materials on Various Substrates

Improvement of Performance of Organic Thin-Film Transistors Through Zone Annealing

High-mobility Pentacene OTFT with TaLaO Gate Dielectric Passivated by Fluorine Plasma

Influence of Post-Annealing on Electrical Characteristics of Thin-Film Transistors with Atomic-Layer-Deposited Zno-Channel/Al2o3-Dielectric

A Study on La Incorporation in Transition-Metal (Y, Zr, and Nb) Oxides as Gate Dielectric of Pentacene Organic Thin-Film Transistor

Organic thin-film transistor performance improvement using ammonia (NH3) plasma treatment on the gate insulator surface

Effects of Annealing Temperature of NbLaO Gate Dielectric on Electrical Properties of ZnO Thin-Film Transistor

High-Performance Pentacene Organic Thin-Film Transistor by Using Nd2O3 Gate Dielectric Doped with Nb

High-Performance Pentacene Organic Thin-Film Transistor Based on Room-Temperature- Processed Hf0.13La0.87O As Gate Dielectric

Improved carrier mobility of pentacene organic TFTs by suppressed oxide growth at remote interface using nitrogen doping in high-k NdNbO dielectric

Effects of Gate Electron Concentration on the Performance of Pentacene Organic Thin-Film Transistors

Effect of Annealing Temperature on Electrical Properties of ZTO Thin-Film Transistors