Abstract:Pentacene organic TFTs (OTFTs) using high-k Nd2O3 doped with niobium and/or nitrogen as gate dielectric have been fabricated with gate-dielectric annealing at 200 °C and 400 °C. For 400 °C, the OTFT with only niobium doping in the Nd2O3 gate dielectric shows an obvious improvement in carrier mobility compared with its counterpart with pure Nd2O3 as gate dielectric. Moreover, for the lower temperature of 200 °C, the OTFT with both niobium and nitrogen dopings in the Nd2O3 gate dielectric achieves further improvement with a small threshold voltage of −0.79 V and a high carrier mobility of 2.24 cm2/V·s. AFM and XPS reveal that the nitrogen doping, like the niobium doping, can reduce the hygroscopicity of Nd2O3, leading to a smoother surface of dielectric and thus larger overlying pentacene grains for reducing the scatterings of surface roughness and grain boundary respectively. Besides, highest mobility is achieved for the NdNbON gate dielectric without the best film quality because with nitrogen doping and lower-temperature annealing, a thinner interlayer between the gate dielectric and the Si gate is formed to enhance the electrostatic coupling between them, thus suppressing the phonon scattering on channel carriers caused by the thermal oscillation of the atoms inside the gate dielectric.

High-Performance Pentacene Organic Thin-Film Transistor by Using Nd2O3 Gate Dielectric Doped with Nb

High-Mobility Pentacene Organic Thin-Film Transistor with La X Nb (1– X ) O Y Gate Dielectric Fabricated on Vacuum Tape

High-performance Organic Thin-Film Transistor by Using LaNbO As Gate Dielectric

Improved carrier mobility of pentacene organic TFTs by suppressed oxide growth at remote interface using nitrogen doping in high-k NdNbO dielectric

High-mobility Pentacene Organic Thin-Film Transistors Achieved by Reducing Remote Phonon Scattering and Surface-Roughness Scattering

Effects of Gate Electron Concentration on the Performance of Pentacene Organic Thin-Film Transistors

High-Performance Pentacene Thin-Film Transistor with High- $\kappa$ HfLaON As Gate Dielectric

High-performance Pentacene OTFT by Incorporating Ti in LaON Gate Dielectric

High-mobility Pentacene Thin-Film Transistor by Using LaxTa(1−x)Oy As Gate Dielectric

High-Performance Pentacene Organic Thin-Film Transistor Based on Room-Temperature- Processed Hf0.13La0.87O As Gate Dielectric

A Study on Pentacene Organic Thin-Film Transistor with Different Gate Materials on Various Substrates

Improved Performance Of P-Type Pentacene Thin Film Transistor By Inserting Thin Interlayer Of N-Type Organic Semiconductor

High-mobility Pentacene OTFT with TaLaO Gate Dielectric Passivated by Fluorine Plasma

Improvement of Pentacene Organic Thin-Film Transistor by Using Fluorine Plasma-Treated or Ion-Implanted HfO 2 As Gate Dielectric

A Study on Organic Thin-Film Transistors Using Hf–La Oxides with Different La Contents As Gate Dielectrics

High performance submicrometer pentacene-based organic thin-film transistor using planar bottom-contact structure

Performance Improvement of Pentacene-Based Organic Thin-Film Transistor with the Planar Bottom-Contact Structure and the Bi-Layer Gate Dielectric

Observation of Hole Injection Boost Via Two Parallel Paths in Pentacene Thin-Film Transistors by Employing Pentacene: 4, 4″-Tris(3-methylphenylphenylamino) Triphenylamine: MoO3 Buffer Layer

Pentacene Thin-Film Transistors with Ta2o5 As the Gate Dielectric

Performance Improvement of Pentacene Organic Thin Film Transistor by Inserting 1,1'-Bis(di-4-tolylaminophenyl) Cyclohexane Hole Transport Buffer Layer

Carrier-Mobility Improvement for Pentacene Otft with Lazro Dielectric by Using Pd Gate