Abstract:Top contact organic field-effect transistors (OFETs) based on pentacene active layer, which employed the organic buffer layers of subphthalocyanine, triphenyldiamine derivative, and 4,4′,4″-tris[3-methylphenyl(phenyl)amino] triphenylamine (m-MTDATA) as the hole injection layers were fabricated. The results showed that the electrical performance of these OFETs, including the saturation current, the field-effect mobility, the on/off current ratio, and the threshold voltage, were all significantly improved by introducing the organic hole injection buffer layers. By optimizing the film thickness of these organic buffer layers to the appropriate thickness, the charge injection from gold source/drain electrodes to pentacene film could be effectively improved. Also, the interfacial properties and the contact resistance between gold source/drain electrodes and pentacene film was analyzed, and the results indicated that the interface property was significantly improved. Moreover, it was found that OFET with m-MTDATA hole injection layer exhibited the best performance compared to other two kinds of materials, and the intrinsic reason was further revealed.

Performance Improvement of Pentacene Organic Thin Film Transistor by Inserting 1,1'-Bis(di-4-tolylaminophenyl) Cyclohexane Hole Transport Buffer Layer

Performance Enhancement of Organic Thin-Film Transistors with Improved Copper Phthalocyanine Crystallization by Inserting Ultrathin Pentacene Buffer

Improving the Performance of the Organic Thin-Film Transistors with Thin Insulating Lithium Fluoride Buffer Layer

Performance Improvement of Top-Contact Pentacene-Based Organic Thin-Film Transistors by Inserting an Ultrathin Teflon Carrier Injection Layer

Improved Performance Of P-Type Pentacene Thin Film Transistor By Inserting Thin Interlayer Of N-Type Organic Semiconductor

Performance Improvement of Organic Thin Film Transistors by Using Active Layer with Sandwich Structure

Improving the Performance of Organic Thin-Film Transistor with a Doped Interlayer

Observation of Hole Injection Boost Via Two Parallel Paths in Pentacene Thin-Film Transistors by Employing Pentacene: 4, 4″-Tris(3-methylphenylphenylamino) Triphenylamine: MoO3 Buffer Layer

Performance Improvement of Bottom-Contact Pentacene-Based Organic Thin-Film Transistors by Inserting a Thin Polytetrafluoroethylene Buffer Layer

Performance Improvement of Pentacene-Based Organic Thin-Film Transistor with the Planar Bottom-Contact Structure and the Bi-Layer Gate Dielectric

Effects of the F(4)Tcnq-Doped Pentacene Interlayers on Performance Improvement of Top-Contact Pentacene-Based Organic Thin-Film Transistors

Improved Pentacene Growth Continuity for Enhancing the Performance of Pentacene-Based Organic Thin-Film Transistors

Effect of Inserting Teflon As A Surface Modification Layer on Bottom-Contact Pentacene-Based Organic Thin-Film Transistors

Performance Enhancement of Pentacene-Based Organic Thin-Film Transistors Using 6,13-Pentacenequinone As a Carrier Injection Interlayer

Improved Performance of Organic Thin Film Transistor with an Inorganic Oxide/Polymer Double-Layer Insulator

Performance enhancement of p-type organic field-effect transistor through introducing organic buffer layers

High-performance Pentacene OTFT by Incorporating Ti in LaON Gate Dielectric

Organic Thin-Film Transistors with Improved Characteristics Using Lutetium Bisphthalocyanine As a Buffer Layer

Significant Enhancement in Built-In Potential and Charge Carrier Collection of Organic Solar Cells Using 4-(5-hexylthiophene-2-yl)-2,6-bis(5-trifluoromethyl)thiophen-2-yl)pyridi Ne As A Cathode Buffer Layer

Performance improvement of pentacene organic field-effect transistor through introducing polymer buffer layers

Improvement of Pentacene Organic Thin-Film Transistor by Using Fluorine Plasma-Treated or Ion-Implanted HfO 2 As Gate Dielectric