Abstract:This study systematically investigates the effects of pentacene deposition rates and channel lengths on the electrical characteristics of pentacene- based organic thin- film transistors (OTFTs), and the performance degradation of OTFTs under the positive drain bias stress. With a slower deposition rate of the pentacene channel layer, the larger grain size is formed, and it improves the performance of pentacene- based OTFTs. As the channel length decreases, the threshold voltage (V-TH) shifts toward the positive direction and the field- effect mobility (mu(FE)) decreases, which are due to the drain-induced barrier lowering effect and the lower mobility in the active channel near the region of source/drain electrodes, respectively. In addition, we also propose a mechanism to present the channel length dependence on the field-effect mobility. Results also show that the pentacene- based OTFTs, which are under positive drain bias stress, exhibit greater performance degradation than those under negative drain bias stress. The greater performance degradation, the decreasing I-ON and the larger VTH shift are due to the greater trap state density (N-trap) created in the bulk channel by the large lateral electrical field and the carriers injected into the gate insulator by the large vertical electrical field, respectively.

Effect of Inserting Teflon As A Surface Modification Layer on Bottom-Contact Pentacene-Based Organic Thin-Film Transistors

Performance Improvement of Top-Contact Pentacene-Based Organic Thin-Film Transistors by Inserting an Ultrathin Teflon Carrier Injection Layer

Performance Improvement of Bottom-Contact Pentacene-Based Organic Thin-Film Transistors by Inserting a Thin Polytetrafluoroethylene Buffer Layer

Effects of the F(4)Tcnq-Doped Pentacene Interlayers on Performance Improvement of Top-Contact Pentacene-Based Organic Thin-Film Transistors

Teflon/SiO 2 bilayer passivation for improving the electrical reliability of pentacene-based organic thin-film transistors

Performance Improvement of Pentacene-Based Organic Thin-Film Transistor with the Planar Bottom-Contact Structure and the Bi-Layer Gate Dielectric

Performance Improvement of Pentacene Organic Thin Film Transistor by Inserting 1,1'-Bis(di-4-tolylaminophenyl) Cyclohexane Hole Transport Buffer Layer

Improved Pentacene Growth Continuity for Enhancing the Performance of Pentacene-Based Organic Thin-Film Transistors

Effects of source/drain-electrode material, thickness and fabrication method on the electrical performance of pentacene thin-film transistor

A Study on Pentacene Organic Thin-Film Transistor with Different Gate Materials on Various Substrates

Improved Performance Of P-Type Pentacene Thin Film Transistor By Inserting Thin Interlayer Of N-Type Organic Semiconductor

Improvement of Pentacene Organic Thin-Film Transistor by Using Fluorine Plasma-Treated or Ion-Implanted HfO 2 As Gate Dielectric

Pentacene Field-Effect Transistors with Sub-10-nm Channel Lengths

Fabrication of Top-Contact Pentacene-Based Organic Thin-Film Transistors with Short Channels Using Two-Step SU8/poly(vinyl Alcohol) Lift-off Photolithography Process

Performance Enhancement of Organic Thin-Film Transistors with Improved Copper Phthalocyanine Crystallization by Inserting Ultrathin Pentacene Buffer

Source/drain Electrodes Contact Effect on the Stability of Bottom-Contact Pentacene Field-Effect Transistors

Improving the Performance of the Organic Thin-Film Transistors with Thin Insulating Lithium Fluoride Buffer Layer

Investigation on the electrical characteristics of a pentacene thin-film transistor and its reliability under positive drain bias stress

Effect of active layer thickness on electrical characteristics of pentacene TFTs with PMMA buffer layer

Improved Performance of Organic Thin Film Transistor with an Inorganic Oxide/Polymer Double-Layer Insulator

Effects of Gate Electron Concentration on the Performance of Pentacene Organic Thin-Film Transistors