Abstract:We report on the influence of the dielectric/organic interface properties on the electrical characteristics of field-effect transistors based on Poly-phenylenevinylene derivatives. We observe a direct influence of the dielectric surface on the field-effect mobility as well as on the charge injection at the source electrode, despite the fact that we used a top contact transistor structure.We find that the presence of traps at the dielectric surface, decreases the hole mobility and increases the threshold voltages. By treating the silicon dioxide dielectric surface with gas phase molecules such as octadecyltrichlorosilane (OTS) and hexamethyldisilazane (HMDS) the hole mobility improves and the threshold voltage slightly increases.The effects of a dielectric polymer layer spin coated onto silicon dioxide substrates before deposition of the semiconductor polymer can be related to the density of the oxydryl groups (-OH), which are the most efficient traps for the charges flowing in the device. We use different polymer species such as polyvinylalchol (PVA), polymethylmetacrilate (PMMA) and a cyclotene derivative (B-staged bisbenzocyclobutene or BCB). The elimination of the -OH groups and of other traps, produces the same effect observed with HMDS coupled to a more pronounced enhancement of the threshold voltage, with the exception of PMMA. The electrical characteristics obtained with HMDS and PMMA polymer dielectrics are the highest reported to date for PPV-based field-effect transistors.We confirm that the purification of the active material is crucial to enhance the device performances and to achieve a better device to device reproducibility.We also investigated the effect of the dispersion of a phosphorescent dye into the active polymeric material. The electrical characteristics of OFETs with HMDS or PMMA dielectric with and without dye doping are compared.

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Enabling Gate Dielectric Design for All Solution-Processed, High-Performance, Flexible Organic Thin-Film Transistors.

Solvent-Free Processable and Photo-Patternable Hybrid Gate Dielectric for Flexible Top-Gate Organic Field-Effect Transistors

Thermally cross-linked polyvinyl alcohol as gate dielectrics for solution processing organic field-effect transistors

Surface engineering of high- k polymeric dielectric layers with a fluorinated organic crosslinker for use in flexible-platform electronics

Pursuing Polymer Dielectric Interfacial Effect in Organic Transistors for Photosensing Performance Optimization.

Binary Polymer Composite Dielectrics for Flexible Low-Voltage Organic Field-Effect Transistors

Influence Of The Dielectric And Of The Active Layer Doping On The Fet Mobility In Ppv-Based Devices

Photoactive Gate Dielectrics.

Interface Engineering of Semiconductor/Dielectric Heterojunctions Toward Functional Organic Thin-Film Transistors

Recent advancements in achieving high dielectric constant polymer dielectrics for low-power-consumption organic field-effect transistors

Low-voltage organic field-effect transistors by using solution-processable high-κ inorganic-polymer hybrid dielectrics

Functionalization of Low‐k Polyimide Gate Dielectrics with Self‐Assembly Monolayer Toward High‐Performance Organic Field‐Effect Transistors and Circuits

Surface-Treated Poly(dimethylsiloxane) as a Gate Dielectric in Solution-Processed Organic Field-Effect Transistors

Facile Synthesis of Solution-Processed Silica and Polyvinyl Phenol Hybrid Dielectric for Flexible Organic Transistors

Zone‐Annealing‐Assisted Solvent‐Free Processing of Complementary Semiconducting Polymer Blends for Organic Field‐Effect Transistors

Solution-processed high-k photopatternable polymers for low-voltage electronics

Low-temperature processable and photo-crosslinkable polyimide gate dielectric for flexible thin-film transistor

Polysiloxane-Poly(Vinyl Alcohol) Composite Dielectrics For High-Efficiency Low Voltage Organic Thin Film Transistors

Thiol-Ene Cross-Linked Polymer Gate Dielectrics For Low-Voltage Organic Thin-Film Transistors