Abstract:Alkyl chain modification strategies in both organic semiconductors and inorganic dielectrics play a crucial role in improving the performance of organic thin-film transistors (OTFTs). Polyimide (PI) and its derivatives have received extensive attention as dielectrics for application in OTFTs because of flexibility, high-temperature resistance, and low cost. However, low-temperature solution processing PI-based gate dielectric for flexible OTFTs with high mobility, low operating voltage, and high operational stability remains an enormous challenge. Furthermore, even though di-n-decyldinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (C10-DNTT) is known to have very high mobility as an air-stable and high-performance organic semiconductor, the C10-DNTT-based TFTs on the PI gate dielectrics still showed relatively low mobility. Here, inspired by alkyl side chain engineering, we design and synthesize a series of PI materials with different alkyl side chain lengths and systematically investigate the PI surface properties and the evolution of organic semiconductor morphology deposited on PI surfaces during the variation of alkyl side chain lengths. It is found that the alkyl side chain length has a critical influence on the PI surface properties, as well as the grain size and molecular orientation of semiconductors. Good field-effect characteristics are obtained with high mobilities (up to 1.05 and 5.22 cm2/Vs, which are some of the best values reported to date), relatively low operating voltage, hysteresis-free behavior, and high operational stability in OTFTs. These results suggest that the strategy of optimizing alkyl side-chain lengths opens up a new research avenue for tuning semiconductor growth to enable high mobility and outstanding operational stability of PI-based OTFTs.

Functionalization of Low‐k Polyimide Gate Dielectrics with Self‐Assembly Monolayer Toward High‐Performance Organic Field‐Effect Transistors and Circuits

Functionalization of Polymer Dielectrics: Functionalization of Low‐k Polyimide Gate Dielectrics with Self‐Assembly Monolayer Toward High‐Performance Organic Field‐Effect Transistors and Circuits (Adv. Mater. Interfaces 11/2021)

Surface Decoration on Polymeric Gate Dielectrics for Flexible Organic Field-Effect Transistors Via Hydroxylation and Subsequent Monolayer Self-Assembly.

Methyl Functionalization on Polyimide Side Chains as Gate Dielectrics for Organic Transistors

Polyimide-based Gate Dielectrics for High-Performance Organic Thin Film Transistors

Optimization of Alkyl Side Chain Length in Polyimide for Gate Dielectrics to Achieve High Mobility and Outstanding Operational Stability in Organic Transistors

Tailoring the Dielectric Layer Structure for Enhanced Performance of Organic Field-Effect Transistors: the Use of a Sandwiched Polar Dielectric Layer

Double Alkyl Side Chains Functionalized Polyimide As Gate Dielectrics for Application in Organic Transistors

High-k polymeric gate insulators for organic field-effect transistors

Recent advancements in achieving high dielectric constant polymer dielectrics for low-power-consumption organic field-effect transistors

Molecular and Atomic Layer Deposition of Hybrid Polyimide–Al2O3 Gate Dielectrics for Flexible Electronic Devices

Copolymer Dielectrics with Balanced Chain-Packing Density and Surface Polarity for High-Performance Flexible Organic Electronics.

Polymer-Based Gate Dielectrics for Organic Field-Effect Transistors

Enabling Gate Dielectric Design for All Solution-Processed, High-Performance, Flexible Organic Thin-Film Transistors.

Solution-processed Organic Field-Effect Transistors with Cross-Linked Poly(4-Vinylphenol)/polyvinyl Alcohol Bilayer Dielectrics

Organozinc compounds as effective dielectric modification layers for polymer field-effect transistors

A Facile Photo-cross-linking Method for Polymer Gate Dielectrics and Their Applications in Fully Solution Processed Low Voltage Organic Field-effect Transistors on Plastic Substrate

Development of High-k Polymer Materials for Use As a Dielectric Layer in the Organic Thin-Film Transistors

Photo‐Curable Fluorinated High‐k Polyimide Dielectrics by Polar Side Substitution Effect for Low‐Voltage Operating Flexible Printed Electronics

Controllable Self-Assembly of PTCDI-C8 for High Mobility Low-Dimensional Organic Field-Effect Transistors

Modulating Charge Transport from Thermally Activated to "Band‐Like" Through Interfacial Bottom‐Up Binding Capability of Bilayer Polymer Dielectrics