Abstract:We report on the influence of the dielectric/organic interface properties on the electrical characteristics of field-effect transistors based on Poly-phenylenevinylene derivatives. We observe a direct influence of the dielectric surface on the field-effect mobility as well as on the charge injection at the source electrode, despite the fact that we used a top contact transistor structure.We find that the presence of traps at the dielectric surface, decreases the hole mobility and increases the threshold voltages. By treating the silicon dioxide dielectric surface with gas phase molecules such as octadecyltrichlorosilane (OTS) and hexamethyldisilazane (HMDS) the hole mobility improves and the threshold voltage slightly increases.The effects of a dielectric polymer layer spin coated onto silicon dioxide substrates before deposition of the semiconductor polymer can be related to the density of the oxydryl groups (-OH), which are the most efficient traps for the charges flowing in the device. We use different polymer species such as polyvinylalchol (PVA), polymethylmetacrilate (PMMA) and a cyclotene derivative (B-staged bisbenzocyclobutene or BCB). The elimination of the -OH groups and of other traps, produces the same effect observed with HMDS coupled to a more pronounced enhancement of the threshold voltage, with the exception of PMMA. The electrical characteristics obtained with HMDS and PMMA polymer dielectrics are the highest reported to date for PPV-based field-effect transistors.We confirm that the purification of the active material is crucial to enhance the device performances and to achieve a better device to device reproducibility.We also investigated the effect of the dispersion of a phosphorescent dye into the active polymeric material. The electrical characteristics of OFETs with HMDS or PMMA dielectric with and without dye doping are compared.

Double Alkyl Side Chains Functionalized Polyimide As Gate Dielectrics for Application in Organic Transistors

Optimization of Alkyl Side Chain Length in Polyimide for Gate Dielectrics to Achieve High Mobility and Outstanding Operational Stability in Organic Transistors

Methyl Functionalization on Polyimide Side Chains as Gate Dielectrics for Organic Transistors

Polysiloxane-Poly(Vinyl Alcohol) Composite Dielectrics For High-Efficiency Low Voltage Organic Thin Film Transistors

Enhancing the Electrical and Thermal Stability of Organic Thin-Film Transistors by Utilizing Fluorinated Polyimide and Silicon Dioxide Bilayer Gate Dielectric

Functionalization of Low‐k Polyimide Gate Dielectrics with Self‐Assembly Monolayer Toward High‐Performance Organic Field‐Effect Transistors and Circuits

Enabling Gate Dielectric Design for All Solution-Processed, High-Performance, Flexible Organic Thin-Film Transistors.

Functionalization of Polymer Dielectrics: Functionalization of Low‐k Polyimide Gate Dielectrics with Self‐Assembly Monolayer Toward High‐Performance Organic Field‐Effect Transistors and Circuits (Adv. Mater. Interfaces 11/2021)

Influence Of The Dielectric And Of The Active Layer Doping On The Fet Mobility In Ppv-Based Devices

Polymer Electrolyte Blend Gate Dielectrics for High-Performance Ultrathin Organic Transistors: Toward Favorable Polymer Blend Miscibility and Reliability

Facile Synthesis of Solution-Processed Silica and Polyvinyl Phenol Hybrid Dielectric for Flexible Organic Transistors

High-k polymeric gate insulators for organic field-effect transistors

Low-voltage operating, high mobility top-gate structural flexible organic thin-film transistor with a one-step spin-coated binary polymer gate dielectric

Chemically Tunable Organic Dielectric Layer on an Oxide TFT: Poly(p-xylylene) Derivatives

Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

Molecular and Atomic Layer Deposition of Hybrid Polyimide–Al2O3 Gate Dielectrics for Flexible Electronic Devices

Achieving low-voltage operating high-mobility organic thin-film transistors by a multi-layered gate dielectric

Low-voltage operated organic thin film transistors and integrated devices with photo-cured and patterned siloxane based organic–inorganic hybrid high-k dielectrics

Recent advancements in achieving high dielectric constant polymer dielectrics for low-power-consumption organic field-effect transistors

Preparation and Application of Organic-Inorganic Nanocomposite Materials in Stretched Organic Thin Film Transistors

Recent Progress in Aromatic Polyimide Dielectrics for Organic Electronic Devices and Circuits