Abstract:Solution processed metal oxide thin-film transistors (MO-TFTs) have gained momentum in recent years and opened new horizons for their extended applications in thin-film optoelectronics. Unfortunately, the relatively high processing temperature has become the main limitation for their commercial application in flexible electronics. In this work, ultrashort femtosecond (fs) laser pulses were used for the annealing of printed InGaZnO TFT arrays with low temperature and fast processing. The high transient intensity and negligible heat-affected zone is beneficial to the effective conversion of precursor to metal-oxide lattices, which was also verified by the x-ray photoelectron spectroscopy analysis. Moreover, for the first time, based on optical engineering method, dielectric mirrors (DMs) is proposed to realize reflection of photon irradiation and protect the underlying polymer substrate. TFTs on polyethylene naphthalate (PEN) substrate with polymer insulator exhibited a mobility of 4.24 cm2 V−1 s−1, along with good mechanical stability. The mechanism of DMs for the improvement of the device performance was systematically investigated based on laser-matter interaction, optical structure and photon transport. DMs can reduce laser-induced pressure and variation of dielectric properties in PEN substrate resulting from the impact ionization due to a strong nonlinear multi-photon absorption. Our work clearly demonstrated that flexible MO-TFTs can be simply fabricated with fs-laser annealing. More importantly, this novel method is applicable for a wide range of MO and polymer substrates, by solving the incompatibility of solution processed MO and polymer substrates due to high processing temperature. Therefore, the proposed method showed tremendous potential to be applicable in flexible electronics such as sensors, display and circuits.

Low temperature UV cross-linked fluorinated polyurethane for organic thin film transistors

Low Temperature Cross-Linked, High Performance Polymer Gate Dielectrics for Solution-Processed Organic Field-Effect Transistors

A Low-Temperature, Solution-Processed High-K Dielectric for Low-Voltage, High-Performance Organic Field-Effect Transistors (Ofets)

UV-Mediated Photochemical Treatment for Low-Temperature Oxide-Based Thin-Film Transistors

Low-voltage operated organic thin film transistors and integrated devices with photo-cured and patterned siloxane based organic–inorganic hybrid high-k dielectrics

Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors

Polysiloxane-Poly(Vinyl Alcohol) Composite Dielectrics For High-Efficiency Low Voltage Organic Thin Film Transistors

Ultrastable Large-Area Atomically Flat 2D Polymer Dielectric for Low-Voltage Flexible Organic Field-Effect Transistors

Synthesis, Structure, Properties, and Applications of Fluorinated Polyurethane

Facile Synthesis of Solution-Processed Silica and Polyvinyl Phenol Hybrid Dielectric for Flexible Organic Transistors

Solution Processable High Quality ZrO2 Dielectric Films for Low Operation Voltage and Flexible Organic Thin Film Transistor Applications

Enabling Gate Dielectric Design for All Solution-Processed, High-Performance, Flexible Organic Thin-Film Transistors.

Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

Low Temperature Poly-Si TFT Technology

Crystallization of sexiphenyl induced by polyurethane containing terphenyl groups affording high-mobility organic thin-film transistor

The mechanical bending effect and mechanism of high performance and low-voltage flexible organic thin-film transistors with a cross-linked PVP dielectric layer

Synthesis, characterization and properties of a novel fluorinated polyurethane

Low-temperature solution-processed flexible metal oxide thin-film transistors via laser annealing

Dielectric Design of High Dielectric Constant Poly(Urea-Urethane) Elastomer for Low-Voltage High-Mobility Intrinsically Stretchable All-Solution-Processed Organic Transistors

Preparation, Characterization, and Properties of Fluorinated Polyurethanes

Surface Modification on Solution Processable ZrO2 High-k Dielectrics for Low Voltage Operations of Organic Thin Film Transistors