Abstract:The manipulation of functional oxide materials' properties through energy-efficient means is of great importance in materials science. Electric field-driven ionic control of functional oxides presents a versatile and effective approach for tailoring material properties, including insulator-metal transitions, superconductivity, magnetism, and optical characteristics, through spin, orbit, charge, and lattice degrees of freedom. This approach introduces a dynamic means of tuning these properties, allowing for real-time adjustments through external stimuli such as electric fields. The ability to modify material characteristics through ionic means is promising for both scientific exploration and practical applications, owing to its energy efficiency and compatibility with room temperature operation. Traditionally, this was primarily explored for energy storage applications, but it has now found broad utility in optoelectronics, nanoelectronic memory, and computing. Controlling charge carriers is a pivotal aspect of advancing the electronic functionalities of oxide materials. The substantial accumulation of charge carriers via electric field-induced electric double layers at oxide-electrolyte interfaces prompts extremely large electric fields, leading to different phenomena such as chemical reactions, phase transitions, and magnetic ordering. The mechanisms involved in electric field-controlled ionic motion using ionic liquids and gels range from primarily electrostatic to completely electrochemical. The electrostatic effect involves the induction of electrons or holes, and ionic motion is specific to the electrolyte side of the interface. In contrast, the electrochemical effect involves ionic motion occurring on both sides of the interface and across it. Through the application of electric fields, the insertion or extraction of ions in functional oxide materials enables the control of various phases and properties. In the electrostatic mechanism, carrier density modulation is primarily driven by band bending, whereas the electrochemical mechanism can completely reshape electronic band structures due to exceptionally high carrier densities. The electrolyte nature and target material properties significantly influence both the electrostatic and electrochemical effects. Recent advancements in characterization techniques and theoretical simulations have improved our understanding of the gating mechanisms in various material systems. In this Account, we provide a concise summary of recent advancements in manipulating the properties of various transition metal oxide material systems using electrolyte-based ionic motion through an electric field. We begin by exploring the detailed mechanisms that underlie how electric field gating can bring about substantial changes in the material properties. These changes encompass alterations in crystal and electronic structures as well as modifications in electrical, optical, and magnetic properties. Additionally, we assess the potential applications of functional oxide devices made possible through these ionic control mechanisms, particularly their relevance to neuromorphic computing. Finally, we address the primary challenges in this field and suggest future research directions to further its progress.

The Electrical Property Modulation of Insulator in Metal–insulator–semiconductor–metal

Energy Barrier at Indium/Indium Selenide Nanosheet Interfaces: Implications of Metal-to-Insulator Transition for Field-Effect Transistor Modeling

Heterojunction-engineered carrier transport in elevated-metal metal-oxide thin-film transistors

Modulation of the Al/Cu2O Schottky Barrier Height for p-Type Oxide TFTs Using a Polyethylenimine Interlayer

Electrostatic Modification of Oxide Semiconductors by Electric Double Layers of Microporous Sio2-Based Solid Electrolyte

Dielectric/semiconductor interfacial doping to develop solution processed high performance 1 V ambipolar oxide-transistor and its application as CMOS inverter

Role of Oxide Charges on The Voltage and Current Coupling Effects between Adjacent Devices Examined by Concentric Metal–Insulator–Semiconductor (MIS) Tunnel Diodes With Ultra-thin Oxide

Overall Enhancement of Electrical Properties of Indium Oxide Thin-Film Transistors by Surface Doping

High Mobilities in Layered InSe Transistors with Indium-Encapsulation-Induced Surface Charge Doping.

Room‐Temperature Reversible and Nonvolatile Tunability of Electrical Properties of Cr‐Doped In2O3 Semiconductor Thin Films Gated by Ferroelectric Single Crystal and Ionic Liquid

Barrier height modulation in Amorphous IGZO/Metal interface using Trichlorosilane-Based Self-Assembled monolayers

Depth profiling charge accumulation from a ferroelectric into a doped Mott insulator

Modulating the Electrical Transport Characteristics of a Metal-Semiconductor-Metal Structure by Local Strain Gradient

Interfacial Charge Engineering in Ferroelectric‐Controlled Mott Transistors

Effect of Dielectric Interface on the Performance of MoS2 Transistors.

Insight into the evolution of electrical properties for Schottky-barrier IGZO thin-film transistors with Cu-based Schottky contacts

Electric Field Induced Ion Migration and Property Tuning in Functional Oxides

Polarization-tunable interfacial properties in monolayer-MoS2 transistors integrated with ferroelectric BiAlO3(0001) polar surfaces

P‐1.11: Performance Improvement of a‐IGZO Thin‐Film Transistor By Using Ta 2 O 5 /SiO 2 Double‐layer Gate Dielectric

A native oxide high-kappa gate dielectric for two-dimensional electronics

Interface engineering with double-network dielectric structure for flexible organic thin film transistors