Abstract:Low-voltage Zn-doped CuI thin film transistors (TFTs) gated by chitosan dielectric were fabricated at a low temperature. The Zn-doped CuI TFT exhibited a more superior on/off current ratio than CuI TFT due to the substitution or supplementation of copper vacancies by Zn ions. The Zn-doped CuI films were characterized by scanning electron microscope, X-ray diffraction, and X-ray photoelectron spectroscopy. The Zn-doped CuI TFTs exhibited an on/off current ratio of 1.58 × 104, a subthreshold swing of 70 mV/decade, and a field effect mobility of 0.40 cm2V−1s−1, demonstrating good operational stability. Due to the electric-double-layer (EDL) effect and high specific capacitance (17.3 μF/cm2) of chitosan gate dielectric, Zn-doped CuI TFT operates at a voltage below −2 V. The threshold voltage is −0.2 V. In particular, we have prepared Zn-doped CuI TFTs with two in-plane gates and NOR logic operation is implemented on such TFTs. In addition, using the ion relaxation effect and EDL effect of chitosan film, a simple pain neuron simulation is realized on such a p-type TFTs for the first time through the bottom gate to regulate the carrier transport of the channel. This p-type device has promising applications in low-cost electronic devices, complementary electronic circuit, and biosensors.

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Low-Voltage Organic/Inorganic Hybrid Transparent Thin-Film Transistors Gated by Chitosan-Based Proton Conductors

Chitosan-Based Electrolyte Gated Low Voltage Oxide Transistor With a Coplanar Modulatory Terminal

Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

Laterally Coupled Izo-Based Transistors on Free-Standing Proton Conducting Chitosan Membranes

Flexible Dual-Gate Oxide TFTs Gated by Chitosan Film on Paper Substrates

Low-Voltage Solution-Processed Zinc-Doped CuI Thin Film Transistors with NOR Logic and Artificial Synaptic Function

Transparent Junctionless Electric-Double-Layer Transistors Gated by a Reinforced Chitosan-Based Biopolymer Electrolyte

Low-Voltage Oxide-Based Electric-Double-Layer TFTs Gated by Stacked $\hbox{sio}_{2}$ Electrolyte/Chitosan Hybrid Dielectrics

Ultralow-Thermal-Budget-Driven IWO-Based Thin-Film Transistors and Application Explorations

Flexible IZO Homojunction TFTs with Graphene Oxide/Chitosan Composite Gate Dielectrics on Paper Substrates

Low-Voltage Transparent Indium–Zinc–Oxide Coplanar Homojunction TFTs Self-Assembled on Inorganic Proton Conductors

Solution-Processed Chitosan-Gated IZO-Based Transistors for Mimicking Synaptic Plasticity

Low-Voltage Sno2 Nanowire Transistors Gated by Solution-Processed Chitosan-Based Proton Conductors

Low-voltage Protonic/electronic Hybrid Indium Zinc Oxide Synaptic Transistors on Paper Substrates

Flexible Low-Voltage IGZO Thin-Film Transistors with Polymer Electret Gate Dielectrics on Paper Substrates

Solution-Processed Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymer Passivation Layer

Double In-Plane-gate IZO-based Thin-Film Transistors with Pea Protein Gate Dielectrics

Dual In-Plane-Gate Thin-Film Transistors Gated by Chitosan on Paper Substrates

Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers

Junctionless dual-gate electrostatic modulation of self-aligned oxide channels by chitosan-based proton conductors