Abstract:Abstract Brain-inspired neuromorphic computing would bring a breakthrough to the classical computing paradigm through its massive parallelism and potential low power consumption advantages. Introduction of flexibility may bring vitality to this area by expanding its application areas to such as wearable and implantable electronics. At present, the development of flexible neuromorphic devices makes it a choice with wide prospect for next-generation wearable artificial neuromorphic computing. In this study, a freestanding graphene oxide/polyvinyl alcohol composite solid electrolyte membrane is utilized as the gate dielectric and support material, and indium-zinc-oxide (IZO) neuromorphic transistors are fabricated on such membrane. Based on the in-plane gate modulation, many key synaptic plasticity behaviors have been successfully emulated, including excitatory postsynaptic current, paired-pulse facilitation, high-pass filtering, and spatiotemporal signal processing. Moreover, transition of the spiking logic and the superlinear and sublinear dendritic integration function are realized. Our results indicate that these freestanding IZO-based neuromorphic transistors may of great significance for future flexible anthropomorphic robots, wearable bionic perception.

Laterally Coupled Izo-Based Transistors on Free-Standing Proton Conducting Chitosan Membranes

Low-voltage indium-zinc-oxide thin film transistors gated by solution-processed chitosan-based proton conductors

Low-Voltage Organic/Inorganic Hybrid Transparent Thin-Film Transistors Gated by Chitosan-Based Proton Conductors

Flexible Dual-Gate MoS₂ Neuromorphic Transistors on Freestanding Proton-Conducting Chitosan Membranes

Flexible Protonic/Electronic Coupled Neuron Transistors Self-Assembled on Paper Substrates for Logic Applications

Proton Conducting Sodium Alginate Electrolyte Laterally Coupled Low-Voltage Oxide-Based Transistors

Junctionless dual-gate electrostatic modulation of self-aligned oxide channels by chitosan-based proton conductors

Laterally Coupled Synaptic Transistors Gated by Proton Conducting Sodium Alginate Films

Transparent Junctionless Electric-Double-Layer Transistors Gated by a Reinforced Chitosan-Based Biopolymer Electrolyte

Laterally Coupled Dual-Gate Oxide-Based Transistors on Sodium Alginate Electrolytes

Flexible Proton-Gated Oxide Synaptic Transistors on Si Membrane.

Low-Voltage Sno2 Nanowire Transistors Gated by Solution-Processed Chitosan-Based Proton Conductors

Freestanding Artificial Synapses Based on Laterally Proton-Coupled Transistors on Chitosan Membranes

Chitosan-Based Electrolyte Gated Low Voltage Oxide Transistor With a Coplanar Modulatory Terminal

Solution-Processed Chitosan-Gated IZO-Based Transistors for Mimicking Synaptic Plasticity

Chitosan-based biopolysaccharide proton conductors for synaptic transistors on paper substrates

Low-voltage Protonic/electronic Hybrid Indium Zinc Oxide Synaptic Transistors on Paper Substrates

Dual In-Plane-Gate Thin-Film Transistors Gated by Chitosan on Paper Substrates

Proton Conducting Graphene Oxide/Chitosan Composite Electrolytes As Gate Dielectrics for New-Concept Devices.

Low-Voltage Transparent Indium–Zinc–Oxide Coplanar Homojunction TFTs Self-Assembled on Inorganic Proton Conductors

Freestanding multi-gate IZO-based neuromorphic transistors on composite electrolyte membranes