Abstract:Microporous SiO2 can provide large electric-double-layer (EDL) capacitance and negligible leakage current, owing to lack of electron carrier and limited mobility of mobile ions. The impedance spectroscopy (ionic-conductivity-frequency and capacitance-voltage characteristics) and Fourier-transformed infrared spectroscopy of microporous SiO2 are characterized, which demonstrated that such dielectric is actually a solid-electrolyte dielectric. InGaZnO4 thin-film transistors (TFTs) on paper substrates gated by microporous-SiO2 solid electrolyte are fabricated at room temperature. The large EDL-specific capacitance (1.36 mu F/cm(2)) results in the paper TFTs operate at a battery-drivable low voltage of 1.0 V. Both depletion-mode (V-th = -0.45 V) and enhancement-mode (V-th = 0.25 V) operations are realized by rationally controlling the oxygen concentration in argon ambient during InGaZnO4 channel deposition. Electrical characteristics with an equivalent field-effect mobility of similar to 21 cm(2)/V . s, a current ON/OFF ratio of greater than 10(5), and a subthreshold swing of similar to 80 mV/dec are demonstrated at low frequencies, which are promising for portable paper electronics.

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