Abstract:Flexible indium‐tin‐oxide (ITO)‐based homojunction thin‐film transistors (TFTs) are fabricated on cellulose‐nanofiber‐soaked paper substrates. The paper is simultaneously used as the gate dielectric and substrate. Source/drain electrodes and a channel layer are sputtered by one‐step radio‐frequency sputtering deposition. The paper exhibits a very large specific electric‐double‐layer capacitance of 2.3 µF cm−2 due to the existence of mobile protons. The flexible ITO‐based TFTs can operate at a low voltage of 2.0 V and show a relatively high ION/IOFF ratio of 7.5 × 106. Furthermore, no obvious electrical degradation is observed at various bending radii. Finally, inverter and NAND logic operation are demonstrated by the TFTs together with two in‐plane gates. Such flexible homojunction TFTs on low‐cost and biodegradable paper are promising for portable paper electronics. Homojunction thin‐film transistors (TFTs) are fabricated on cellulose‐nanofiber‐soaked paper substrates. The TFTs, which are based on indium tin oxide (ITO) are flexible and can operate at a low voltage, and the paper is simultaneously used as the gate dielectric layer and the substrate. NAND logic operation is demonstrated by using the TFTs with two in‐plane gates.

Flexible Low-Voltage Electric-Double-Layer TFTs Self-Assembled on Paper Substrates

Low-voltage electric-double-layer TFTs on SiO2-covered paper substrates

Flexible ITO-Based TFTs on Paper Substrates

Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated By Sio2-Based Solid Electrolyte

Low-Voltage Electric-Double-Layer TFTs on $ \hbox{SiO}_{2}$ -Covered Paper Substrates

Junctionless Flexible Oxide-Based Thin-Film Transistors on Paper Substrates

Self-Assembled Ultralow-Voltage Flexible Transparent Thin-Film Transistors Gated by $\Hbox{sio}_{2}$-Based Solid Electrolyte

Flexible Dual-Gate Oxide TFTs Gated by Chitosan Film on Paper Substrates

Flexible Low-Voltage IGZO Thin-Film Transistors with Polymer Electret Gate Dielectrics on Paper Substrates

Low-Voltage Oxide-Based Tfts Self-Assembled on Paper Substrates with Tunable Threshold Voltage

Flexible Indium‐Tin‐Oxide Homojunction Thin‐Film Transistors with Two In‐Plane Gates on Cellulose‐Nanofiber‐Soaked Papers

Flexible IZO Homojunction TFTs with Graphene Oxide/Chitosan Composite Gate Dielectrics on Paper Substrates

Flexible Transparent Junctionless TFTs with Oxygen-Tuned Indium-Zinc-Oxide Channels

Lateral-coupling coplanar-gate oxide-based thin-film transistors on bare paper substrates

Flexible electric-double-layer thin film transistors based on a vertical InGaZnO 4 channel

15.1: Invited Paper: A Low‐Temperature Elevated‐Metal Metal‐Oxide Thin‐Film Transistor Technology for Flexible Electronics

Low-Voltage Oxide-Based Electric-Double-Layer TFTs Gated by Stacked $\hbox{sio}_{2}$ Electrolyte/Chitosan Hybrid Dielectrics

In-Plane-Gate Indium-Tin-Oxide Thin-Film Transistors Self-Assembled on Paper Substrates

36.3: Flexible ZnO Thin‐Film Transistors Fabricated on PEN Substrate by Atomic Layer Deposition at Low Temperature

One-Volt Oxide Thin-Film Transistors on Paper Substrates Gated by $\hbox{sio}_{2}$ -Based Solid Electrolyte with Controllable Operation Modes

Ultralow-Thermal-Budget-Driven IWO-Based Thin-Film Transistors and Application Explorations