Abstract:In this letter, copper alloy Cu-0.3 wt.% Cr-0.2 wt.% Zr film was used as bottom-gate electrode for flexible neodymium-doped InZnO thin-film transistor (TFT) applications. The results showed that the sputtering power and annealing temperature of a Cu-Cr-Zr film on a polyimide (PI) substrate greatly affect the resistivity and the adhesion of the gate electrode. And the lowest resistivity as well as the best adhesion was obtained by increasing power and annealing temperature to 150 W and 350 degrees, respectively, which was compatible with the optimum annealing temperature of Nd.IZO channel. Transmission electron microscopy showed the aggregation and migration of Cr and Zr in the Cu-Cr-Zr layer, which results in a high adhesion strength and conductivity. As a result, the Nd.IZO TFT with the Cu-Cr-Zr bottom-gate electrode was fabricated on the PI substrate and demonstrated a saturation mobility (mu(sat)) of 27.0 cm(2)/V . s, an ON/OFF current ratio (I-ON/I-OFF) of 107, a threshold voltage (V-th) of -0.1 V, and a subthreshold swing of 0.28 V/decade (no significant deterioration after 10k times repetitive bending stress). Furthermore, it exhibited a good mechanical bending stability of only a Delta V-th shift of -0.3/0.43 V after 10k times repetitive bending stress under negative/positive gate bias stress conditions for 5400 s.

Graphitic Carbon Nitride/Polyvinylpyrrolidone Composite Dielectric for Low-Voltage Flexible InZnO Thin Film Transistor Grown on a Polyethylene Terephthalate Substrate

P‐10.1: Low‐voltage Flexible Thin‐film Transistor Based on C3N4/polyvinylpyrrolidone Composite Electrolyte

Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

Flexible IZO Homojunction TFTs with Graphene Oxide/Chitosan Composite Gate Dielectrics on Paper Substrates

Flexible Low-Voltage IGZO Thin-Film Transistors with Polymer Electret Gate Dielectrics on Paper Substrates

Flexible IGZO Thin-Film Transistors and Inverter Circuits with Diode-Connected Transistors Fabricated on Transparent Polyimide Substrates

Fabrication of Flexible Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors by a Chemical Vapor Deposition-Free Process on Polyethylene Napthalate

Inkjet Printing PVP Dielectric for Flexible Thin Film Transistor

Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors

Flexible High-Entropy Poly(vinyl Alcohol) Dielectric Films Were Prepared at a Low Temperature and Applied to an Indium Gallium Zinc Oxide Thin-Film Transistor.

Chitosan-Gated Low-Voltage Transparent Indium-Free Aluminum-Doped Zinc Oxide Thin-Film Transistors

Flexible Low-Voltage In–Zn–O Homojunction TFTs with Beeswax Gate Dielectric on Paper Substrates

Flexible Transparent Junctionless TFTs with Oxygen-Tuned Indium-Zinc-Oxide Channels

Room-Temperature-Processed Flexible Amorphous InGaZnO Thin Film Transistor.

High-Performance and Flexible Neodymium- Doped Oxide Semiconductor Thin-Film Transistors with Copper Alloy Bottom-Gate Electrode

High-Performance ZnO Thin-Film Transistors on Flexible PET Substrates with a Maximum Process Temperature of 100 °C

Flexible Indium‐Tin‐Oxide Homojunction Thin‐Film Transistors with Two In‐Plane Gates on Cellulose‐Nanofiber‐Soaked Papers

Low-voltage, Solution-Processed InZnO Thin-Film Transistors with Enhanced Performance Achieved by Bilayer Gate Dielectrics

DC and AC Performance of InGaZnO Thin-Film Transistors on Flexible PEEK Substrate

Flexible Thin-Film Transistors with Vertical In-Ga-Zn-O Channel Using Atomic-Layer Deposition on Poly(Ethylene Naphthalate) Substrate

Flexible Amorphous Oxide Thin-Film Transistors on Polyimide Substrate for AMOLED