Abstract:Solution-driven metal-oxide semiconductors have recently received much attention as a viable option for low-cost, flexible electronic devices. In this paper, a simple, environmentally friendly aqueous solution method has been adopted to deposit an ultrathin In2O3 semiconductor layer with a thickness of about 7 nm at low temperature. Then, in combination with the advantages of atomic layer deposition (ALD) technology, an ultrathin aluminum oxide dielectric layer of about 20 nm was prepared to fabricate high-performance In2O3/Al2O3 thin-film transistor (TFT) devices. The device with optimized annealing temperature of 280 degrees C has demonstrated an excellent electrical performance, including a high saturation mobility of 11.85 cm(2) .V-1 . s(-1), a large ON/OFF current ratio of 10(6), a low threshold voltage of 0.12 V, a small hysteresis voltage of 0.05 V, and a small density of interface state of 1.97 x 10(12) cm(-2), respectively. To demonstrate the potential of In2O3/AlOx TFT toward more complex logic applications, the unipolar inverter was further constructed and exhibited a high gain of 5. Importantly, all these device parameters were obtained at an ultralow operating voltage of 2.5 V. As a result, it can be inferred that the water-induced In2O3 TFTs based on ALD-derived Al2O3 dielectrics have a potential application as a promising alternative for lowcost, low-power consumption, and large-area environmentally friendly oxide flexible electronics.

Fabrication of Indium Gallium Zinc Oxide (IGZO) TFTs Using a Solution-Based Process

Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

Fabrication of an a-IGZO Thin Film Transistor Using Selective Deposition of Cobalt by the Self-Assembly Monolayer (SAM) Process

Fabrication and performance of indium oxide based transparent thin film transistors

Fabrication and Properties of InGaZnO Thin-Film Transistors Based on a Sol–Gel Method with Different Electrode Patterns

Low-Temperature Fabrication of Fully Transparent Igzo Thin Film Transistors on Glass Substrate

Fabrication of Transparent Indium Zinc Oxide Thin Film Transistors by Sol-gel Technology

Tailoring IGZO Composition for Enhanced Fully Solution-Based Thin Film Transistors

Sol–gel processed indium zinc oxide thin film and transparent thin-film transistors

Large Area, Ultrathin, and Transparent InGaZnO Films from Printing of Liquid Ga–In–Zn Alloys for Thin Film Transistors

High-Performance Solution-Processed Amorphous InGaZnO Thin Film Transistors with a Metal–Organic Decomposition Method

Transparent Amorphous Indium-Gallium-Zinc-Oxygen Thin Film Transistors Using Solution Technology at Low Temperature

High-quality indium–gallium–zinc oxide films synthesized by atomic layer deposition using a single cocktail precursor based on a liquid-delivery system and their application in transistors and inverters

Solution-processed indium gallium zinc oxide thin-film transistors with infrared irradiation annealing

Thin Film Transistor Using Amorphous InGaZnO Films as Both Channel and Source/Drain Electrodes

Performance of Transparent Indium–Gallium–Zinc Oxide Thin Film Transistor Prepared by All Plasma Enhanced Atomic Layer Deposition

Self-Assembled Transparent A-Igzo Based Tfts for Flexible Sensing Applications

Chemical and Electrical Properties of Low-Temperature Solution-Processed In–Ga–Zn-O Thin-Film Transistors

Synthesis of InGaZnO4 Colloids and Its Application in a TFT Device

Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors