Abstract:In this work, acetylacetone assisted solution-processed In-Ga-Zn-O (IGZO) thin film transistors (TFTs) using Al2O3 as gate dielectrics were investigated. Normally, fully covered Al2O3 thin films are difficult to achieve by spin coating with conventional solvent, such as 2-methoxyethanol, due to the poor wettability of highly doped silicon. Here, a conventional aluminum nitrate solution with an additive was designed to spin coat robust continuous Al2O3 thin films, resulting from improved solution hydrophilic with a contact angle of 17 degrees. For active layer fabrication, we utilized the previous reported combustion process to lower treatment temperature, which could be confined in the range from 220 degrees C to 300 degrees C, without losing the device performance. Results show that all the devices performed well. Especially, after 240 degrees C annealing of both Al2O3 (in thickness of around 45 nm) and IGZO thin films (in thickness of around 30 nm), we have obtained the following device parameters, namely a Al2O3 dielectric breakdown electric field at 7.8 MV cm(-1), a current density of around 1 x 10(-6) A cm(-2) in the voltage range of -3 V to 3 V, a areal capacitance of 291 nF cm(-2) at 100 Hz, a carrier mobility of 0.74 cm(2) V-1 s(-1), a threshold voltage of -0.4 V, a current on-off ratio of 6 x 10(3), a subthreshold swing of 375 mV per decade. Fabrication of combustion-processed active layers and our facile solution processed high-k dielectrics provides a feasible approach for low cost oxide flexible TFTs applications.

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