Abstract:Self‐aligned gate transistors are developed with bilayer source/drain electrodes and a photonically cured indium‐gallium‐zinc‐oxide as the semiconducting channel. The proposed transistor architecture minimizes the overlap capacitances and access resistance while enabling precise electrode work function engineering without increasing manufacturing complexity. The ensuing transistors exhibit high electron mobility, small subthreshold swing, and low contact resistance. Metal oxide thin‐film transistors (TFTs) offer remarkable opportunities for applications in emerging transparent and flexible microelectronics. Unfortunately, their performance is hindered by limitations associated with parasitic effects, such as parasitic electrode overlap capacitances and high contact resistance, which can severely limit their dynamic behavior. Here, an innovative method is reported to fabricate coplanar self‐aligned‐gate (SAG) indium‐gallium‐zinc‐oxide (IGZO) transistors with engineered source/drain contacts. The manufacturing process starts with the deposition and patterning of a gate electrode/dielectric stack and its functionalization with an organic self‐assembled monolayer (SAM) as the surface energy modifier. A second gold (Au) electrode is subsequently deposited over the gate electrode stack. The overlapping region between the two electrodes is removed via self‐delamination under mild sonication, forming perfectly aligned coplanar Au‐Gate‐Au electrodes. Device fabrication is completed with the spin coating of the IGZO precursor, followed by rapid photonic curing. Replacing the gold source/drain contact with bimetallic electrodes such as Au/In and Au/ITO enables a reduction in contact resistance and improves the transistor performance remarkably without increasing manufacturing complexity. The method is highly scalable, robust, and applicable to other semiconductor materials.

BEOL Compatible Ultra-Thin ITO Transistor with Performance Recoverable Capability by in Situ Electrothermal Annealing

Highly Stable Atomic Layer Deposited Zinc Oxide Thin-Film Transistors Incorporating Triple O 2 Annealing

Atomic-Layer-Deposited In–Sn–O Thin-Film Transistors With Robust Thermal Stability at 400 °C and Downscaling of Channel

Atomic-Layer-Deposited In–Sn–O Thin-Film Transistors with Robust Thermal Stability at 400 $^{\circ}$ C and Downscaling of Channel

PBTI and HCI Degradations of Ultrathin Body InGaAs-On-Insulator Nmosfets Fabricated by Wafer Bonding

Atomically Thin Indium-Tin-Oxide Transistors Enabled by Atomic Layer Deposition

Amorphous Semi-Insulating Al-doped In2O3 Growth by Atomic Layer Deposition for Thin-Film Transistors

Positive Bias Temperature Instability and Hot Carrier Injection of Back Gate Ultra-thin-body in 0.53 Ga 0.47 As-on-Insulator N-Channel Metal-Oxide-Semiconductor Field-Effect Transistor

Transient Thermal and Electrical Co-Optimization of BEOL Top-Gated ALD In 2 O 3 FETs Toward Monolithic 3-D Integration

Remarkable Bias‐Stress Stability of Ultrathin Atomic‐Layer‐Deposited Indium Oxide Thin‐Film Transistors Enabled by Plasma Fluorination

Contact‐Engineering of Self‐Aligned‐Gate Metal Oxide Transistors Processed via Electrode Self‐Delamination and Rapid Photonic Curing

P‐1.11: Back‐End‐of‐Line Compatible Al‐doped Indium Zinc Oxide Transistors with Excellent Thermal Stability

Nanometre-thin Indium Tin Oxide for Advanced High-Performance Electronics

Negative-U Defect Passivation in Oxide-Semiconductor by Channel Defect Self-Compensation Effect to Achieve Low Bias Stress VTH Instability of Low-Thermal Budget IGZO TFT and FeFETs

Improved electrical performance of a sol-gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealing

Improved Environmental Stability of InSnO Thin-Film Transistor by Interface Engineering

Reliability Engineering of High‐Mobility IGZO Transistors via Gate Insulator Heterostructures Grown by Atomic Layer Deposition

Intermittent O$_{\text{2}}$ Plasma Treatment as a Novel Strategy to Optimize the Electrical Properties of Nanofibers-Based Transistors

High-performance a-ITZO TFTs with high bias stability enabled by self-aligned passivation using a-GaOx

Highly Stable, High Mobility Al:SnZnInO Back-Channel Etch Thin-Film Transistor Fabricated Using PAN-Based Wet Etchant for Source and Drain Patterning

Enhanced NBIS Stability of Oxide Thin-Film Transistors by Using Terbium-Incorporated Alumina