Abstract:In this work, we report the first demonstration of In <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> 3D transistors coated on fin-structures and integrated circuits by a back-end-of-line (BEOL) compatible atomic layer deposition (ALD) process. High performance planar In <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> transistors with high mobility of 113 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> /V • s and record high maximum drain current of 2.5 mA/μm are achieved by channel thickness engineering and post-deposition annealing. High-performance ALD In <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> based zero-V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GS</inf> -load inverter is demonstrated with maximum voltage gain of 38 V/V and minimum supply voltage (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DD</inf> ) down to 0.5 V. ALD In <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> 3D Fin transistors are also demonstrated, benefiting from the conformal deposition capability of ALD. These results suggest ALD oxide semiconductors and devices have unique advantages and are promising toward BEOL-compatible monolithic 3D integration for 3D integrated circuits.

First Demonstration of Atomic-Layer-Deposited BEOL-Compatible In<inf>2</inf>O<inf>3</inf> 3D Fin Transistors and Integrated Circuits: High Mobility of 113 cm<sup>2</sup>/V•s, Maximum Drain Current of 2.5 mA/μm and Maximum Voltage Gain of 38 V/V in In<inf>2</inf>O<inf>3</inf> Inverter

High-Performance Atomic-Layer-Deposited Indium Oxide 3-D Transistors and Integrated Circuits for Monolithic 3-D Integration

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Monolithic 3D Integration of Vertically Stacked CMOS Devices and Circuits with High-Mobility Atomic-Layer-Deposited In2O3 N-Fet and Polycrystalline Si P-Fet: Achieving Large Noise Margin and High Voltage Gain of 134 V/V

Why In 2 O 3 Can Make 0.7 nm Atomic Layer Thin Transistors

Scaled Atomic-Layer-Deposited Indium Oxide Nanometer Transistors With Maximum Drain Current Exceeding 2 A/mm at Drain Voltage of 0.7 V

First Demonstration of Highly Scaled Atomic Layer Deposited Ultrathin InSnZnO Channel Thin Film Transistor Exhibiting Superior Electrical Characteristics

Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors?

Atomically Thin Indium-Tin-Oxide Transistors Enabled by Atomic Layer Deposition

Amorphous Semi-Insulating Al-doped In2O3 Growth by Atomic Layer Deposition for Thin-Film Transistors

Atomic Layer Deposition of WO 3 -Doped In 2 O 3 for Reliable and Scalable BEOL-Compatible Transistors

Vertically stacked multilayer atomic-layer-deposited sub-1-nm In2O3 field-effect transistors with back-end-of-line compatibility

Transient Thermal and Electrical Co-Optimization of BEOL Top-Gated ALD In 2 O 3 FETs Toward Monolithic 3-D Integration

CMOS backend-of-line compatible memory array and logic circuitries enabled by high performance atomic layer deposited ZnO thin-film transistor

High-Performance Thin-Film Transistors and Inverters Based on ALD-Derived Ultrathin Al 2 O 3 -Passivated CeO 2 Bilayer Gate Dielectrics

Comparative Study on Indium Precursors for Plasma-Enhanced Atomic Layer Deposition of In2O3 and Application to High-Performance Field-Effect Transistors

A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel for 3-D Integrated Devices

Atomic-Layer-Deposited In–Sn–O Thin-Film Transistors with Robust Thermal Stability at 400 $^{\circ}$ C and Downscaling of Channel

A Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current

Highly Robust Atomic Layer Deposition‐Indium Gallium Zinc Oxide Thin‐Film Transistors with Hybrid Gate Insulator Fabricated via Two‐Step Atomic Layer Process for High‐Density Integrated All‐Oxide Vertical Complementary Metal‐Oxide‐Semiconductor Applications