Abstract:Intrinsically stretchable electronics with skin-like mechanical properties have been identified as a promising platform for emerging applications ranging from continuous physiological monitoring to real-time analysis of health conditions, to closed-loop delivery of autonomous medical treatment 1 – 7 . However, current technologies could only reach electrical performance at amorphous-silicon level (that is, charge-carrier mobility of about 1 cm 2 V −1 s −1 ), low integration scale (for example, 54 transistors per circuit) and limited functionalities 8 – 11 . Here we report high-density, intrinsically stretchable transistors and integrated circuits with high driving ability, high operation speed and large-scale integration. They were enabled by a combination of innovations in materials, fabrication process design, device engineering and circuit design. Our intrinsically stretchable transistors exhibit an average field-effect mobility of more than 20 cm 2 V −1 s −1 under 100% strain, a device density of 100,000 transistors per cm 2 , including interconnects and a high drive current of around 2 μA μm −1 at a supply voltage of 5 V. Notably, these achieved parameters are on par with state-of-the-art flexible transistors based on metal-oxide, carbon nanotube and polycrystalline silicon materials on plastic substrates 12 – 14 . Furthermore, we realize a large-scale integrated circuit with more than 1,000 transistors and a stage-switching frequency greater than 1 MHz, for the first time, to our knowledge, in intrinsically stretchable electronics. Moreover, we demonstrate a high-throughput braille recognition system that surpasses human skin sensing ability, enabled by an active-matrix tactile sensor array with a record-high density of 2,500 units per cm 2 , and a light-emitting diode display with a high refreshing speed of 60 Hz and excellent mechanical robustness. The above advancements in device performance have substantially enhanced the abilities of skin-like electronics.

Ultrashort 15-nm flexible radio frequency ITO transistors enduring mechanical and temperature stress

High Performance Gigahertz Flexible Radio Frequency Transistors with Extreme Bending Conditions

High-stability Flexible Radio Frequency Transistor and Mixer Based on Ultrathin Indium Tin Oxide Channel

High-Temperature-Annealed Flexible Carbon Nanotube Network Transistors for High-Frequency Wearable Wireless Electronics.

Fast Flexible Transistors with a Nanotrench Structure

Flexible Nanoscale Amorphous Oxide Transistors with a Gold-Assisted Transfer Method

Rf Characterization of Gigahertz Flexible Silicon Thin-Film Transistor on Plastic Substrates under Bending Conditions

First Demonstration of Top-Gate Indium-Tin-Oxide RF Transistors with Record High Cut-off Frequency of 48 GHz, I<inf>d</inf> of 2.32 mA/μm and g<inf>m</inf> of 900 μS/μm on SiC Substrate with Superior Reliability at 85 °C

High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics

First Demonstration of Top-Gate Indium-Tin-Oxide RF Transistors with Record High Cut-off Frequency of 48 GHz, Id of 2.32 Ma/μm and Gm of 900 Μs/μm on SiC Substrate with Superior Reliability at 85 °C

Nanometre-thin Indium Tin Oxide for Advanced High-Performance Electronics

Ultra-high Drivability, High-Mobility, Low-Voltage and High-Integration Intrinsically Stretchable Transistors.

Beol Compatible 15-Nm Channel Length Ultrathin Indium-Tin-Oxide Transistors With I-On=970 Mu A/Mu M And On/Off Ratio Near 10(11) At V-Ds=0.5 V

High-Performance ZnO Thin-Film Transistors on Flexible PET Substrates with a Maximum Process Temperature of 100 °C

Sub-180-nanometer-thick ultraconformable high-performance carbon nanotube-based dual-gate transistors and differential amplifiers

High-speed and Large-Scale Intrinsically Stretchable Integrated Circuits

P‐1.8: High Performance ZnO Thin Film Transistors on Flexible Substrate with Process Temperature No More Than 100 °C

High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition

10-nm Channel Length Indium-Tin-Oxide transistors with I-on=1860 mu A/mu m, G(m)=1050 mu S/mu m at V-ds=1 V with BEOL Compatibility

Low-Voltage, High Performance Flexible Organic Field Effect Transistors Based on Ultrathin Single Crystal Microribbons.

Highly Robust Flexible Ferroelectric Field Effect Transistors Operable at High Temperature with Low‐Power Consumption