Abstract:As an emerging material, graphene has attracted vast interest in solid-state physics, materials science, nanoelectronics and bioscience. Graphene has zero bandgap with its valence and conduction bands are cone-shaped and meet at the K points of the Brillouin zone. Due to its high intrinsic carrier mobility, large saturation velocity, and high on state current density, graphene is also considered as a promising candidate for high-frequency devices. To improve the reliability of graphene FETs, which include shifting the Dirac point voltage toward zero, increasing the channel mobility and decreasing the source/drain contact resistance, we optimized the device fabrication process. For CVD grown graphene, the film transfer and the device fabrication processes may produce interfacial states between graphene and the substrate and make graphene p or n-type, which shift the fermi level far away from the Dirac point. We have found that after graphene film transfer, an annealing process at 400°C under N2 ambient will shift Dirac point toward zero gate voltage. Ti/Au, Ni, and Ti/Pd/Au source/drain structures have been studied to minimize the contact resistance. According to the measured data, Ti/Pd/Au structure gives the lowest contact resistance (∼500ohmμm). By controlling the process of graphene growth, transfer and device fabrication, we have achieved graphene FETs with a field effective mobility of 16,000cm2/Vs after subtraction of contact resistance. The contact resistivity was estimated in the range of 1.1×10−6Ωcm2 to 8.8×10−6Ωcm2, which is close to state of the art III–V technology. The maximum transconductance was found to be 280mS/mm at VD=0.5V, which is the highest value among CVD graphene FETs published to date.

Embedded-gate Graphene Transistors for High-Mobility Detachable Flexible Nanoelectronics

Flexible field-effect transistors with high-quality and uniform single-layer graphene for high mobility

Highly Bendable High-Mobility Graphene Field Effect Transistors with Multi-Finger Embedded Gates on Flexible Substrates

High mobility top gated field-effect transistors and integrated circuits based on chemical vapor deposition-derived monolayer MoS 2

High mobility graphene field effect transistors on flexible EVA/PET foils

High Mobility Flexible Graphene Field-Effect Transistors and Ambipolar Radio-Frequency Circuits

Mobility in Graphene Double Gate Field Effect Transistors

High-Kappa Oxide Nanoribbons As Gate Dielectrics For High Mobility Top-Gated Graphene Transistors

10.1063/1.4772541.1

Interface-Dependent Effective Mobility in Graphene Field-Effect Transistors

Transport Properties of Graphene Nanoribbon Transistors on Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene

State-of-the-art graphene transistors on hexagonal boron nitride, high-k, and polymeric films for GHz flexible analog nanoelectronics

Multi-Finger Flexible Graphene Field Effect Transistors with High Bendability

High Carrier Mobility in Suspended-Channel Graphene Field Effect Transistors

Top-gated graphene field-effect transistors with high normalized transconductance and designable dirac point voltage.

Extremely high mobility over 5000 cm2/Vs obtained from MoS2 nanosheet transistor with NiOx Schottky gate

Optimizing the fabrication process for high performance graphene field effect transistors.

Simulation Study of Channel Mobility and Device Performance Dependence on Gate Stack in Graphene Field-Effect Transistors

Ultrahigh electron mobility in suspended graphene

Flexible field-effect transistors with a high on/off current ratio based on large-area single-crystal graphene

Manipulating graphene mobility and charge neutral point with ligand-bound nanoparticles as charge reservoir.