Abstract:Monolayer graphene is a promising material for a wide range of applications, including sensors, optoelectronics, antennas, EMR shielding, flexible electronics, and conducting electrodes. Chemical vapor deposition (CVD) of carbon atoms on a metal catalyst is the most scalable and cost-efficient method for synthesizing high-quality, large-area monolayer graphene. The usual method of transferring the CVD graphene from the catalyst to a target substrate involves a polymer carrier which is dissolved after the transfer process is completed. Due to often unavoidable damage to graphene, as well as contamination and residues, carrier mobilities are typically 1 000 − 3 000 cm^2/(V s), unless complex and elaborate measures are taken. Here, we report on a simple scalable fabrication method for flexible graphene field-effect transistors that eliminates the polymer interim carrier, by laminating the graphene directly onto office lamination foils, removing the catalyst, and depositing Parylene N as a gate dielectric and encapsulation layer. The fabricated transistors show field and Hall-effect mobilities of 7 000 − 10 000 cm^2/(V s) with a residual charge-carrier density of 2 × 10^11 1/cm^2 at room temperature. We further validate the material quality by terahertz time domain spectroscopy (THz-TDS) and observation of the quantum Hall effect at low temperatures in a moderate magnetic field of ∼ 5 T. The Parylene encapsulation provides long-term stability and protection against additional lithography steps, enabling vertical device integration in multilayer electronics on a flexible platform.

Ultrahigh electron mobility in suspended graphene

High Carrier Mobility in Suspended-Channel Graphene Field Effect Transistors

Electrical transport in suspended and double gated trilayer graphene

High-mobility, wet-transferred graphene grown by chemical vapor deposition

High-Field Electrical and Thermal Transport in Suspended Graphene

Embedded-gate Graphene Transistors for High-Mobility Detachable Flexible Nanoelectronics

High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen

Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper

Flexible field-effect transistors with high-quality and uniform single-layer graphene for high mobility

Magnetoconductance Oscillations in High-Mobility Suspended Bilayer and Trilayer Graphene

Mobility in Graphene Double Gate Field Effect Transistors

Transport Measurements on Ultra-Clean Dual-Gated Suspended Bilayer Graphene

Dry transfer method for suspended graphene on lift-off-resist: simple ballistic devices with Fabry-Pérot interference

Widely tunable carrier mobility of boron nitride-embedded graphene.

A new transfer technique for high mobility graphene devices on commercially available hexagonal boron nitride

High mobility graphene field effect transistors on flexible EVA/PET foils

Universal mobility characteristics of graphene originating from electron/hole scattering by ionised impurities

Ultraclean Suspended Monolayer Graphene Achieved by in Situ Current Annealing.

Ultra-high mobility semiconducting epitaxial graphene on silicon carbide

Manipulating graphene mobility and charge neutral point with ligand-bound nanoparticles as charge reservoir.

Extremely High Intrinsic Carrier Mobility and Quantum Hall Effect of Single Crystalline Graphene Grown on Ge(110)