High Performance Double-Gate Graphene Radio-Frequency Transistors

Qingguo Gao,Xiong,Xuefei Li,Yanqing Wu
DOI: https://doi.org/10.1109/edssc.2018.8487093
2018-01-01
Abstract:Despite the demonstrated high current gain cutoff frequency (f T ), most graphene transistors show significantly lower maximum oscillation frequency (f max ), which is a crucial figure of merit that determines the transistors' power amplification ability. This work presents a new graphene device structure with double-gate synchronously control the graphene channel. The structure possesses several advantages over conventional top gate structures, including low gate resistance and high on/off ratio. f max ~ 50% higher than f T is achieved from devices with different gate length.
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