Abstract:Recent observations of the negative differential conductance (NDC) phenomenon in graphene field-effect transistors (FET) open up new opportunities for their application in graphene-based fast switches, frequency multipliers and, most importantly, in high frequency oscillators up to the terahertz regime. Unlike conventional two-terminal NDC devices that rely on resonant tunneling and inter-valley transferring, in the present work, it has been shown that the universal NDC phenomenon of graphene-based FETs originates from their intrinsic nonlinear carrier transport under a strong electric field. The operation of graphene-NDC devices depends strongly on the interface between graphene and dielectric materials, the scattering-limited carrier mobility, and on the saturation velocity. To reveal such NDC behavior, the output characteristics of GFET are investigated rigorously, with both an analytical model and self-consistent transport equation, and with a multi-electrical parameter simulation. It is demonstrated that the contact-induced doping effect plays an important role in the operational efficiency of graphene-based NDC devices, rather than the ambipolar behavior associated with the competition between electron and hole conductances. In the absence of a NDC regime or beyond one, ambipolar transport starts at Vds > 2Vgs at the drain end, and as the dielectric layer begins to thin down, the kink-like saturation output characteristic is enhanced by the quantum capacitance contribution. These observations reveal the intrinsic mechanism of the NDC effect and open up new opportunities for the performance improvement of GFETs in future high-frequency applications, beyond the current paradigm based on two-terminal diodes.

High-Frequency Performance of Graphene Field Effect Transistors with Saturating Iv-Characteristics

High frequency and noise performance of GFETs

Graphene FET on Diamond for High-Frequency Electronics

Flexible Graphene Field-Effect Transistors Encapsulated in Hexagonal Boron Nitride

Nonlinear Current-Voltage Characteristics and Enhanced Negative Differential Conductance in Graphene Field Effect Transistors.

Enhanced Performance of Graphene Transistor with Ion-Gel Top Gate

Sub-10 nm Gate Length Graphene Transistors: Operating at Terahertz Frequencies with Current Saturation

High Performance Double-Gate Graphene Radio-Frequency Transistors

Deep-submicron Graphene Field-Effect Transistors with State-of-Art Fmax

Radio frequency performance projection and stability trade-off of h-BN encapsulated graphene field-effect transistors

RF performance projections for 2D graphene transistors: Role of parasitics at the ballistic transport limit

Operation of Graphene Transistors at GHz Frequencies

100 GHz Transistors from Wafer Scale Epitaxial Graphene

Graphene Based Field Effect Transistor Analog/RF Performance Analysis from Non-equilibrium Green’s Function Simulation

Record high RF performance for epitaxial graphene transistors

Analysis of Local Properties and Performance of Bilayer Epitaxial Graphene Field Effect Transistors on SiC

High-Frequency Flexible Graphene Field-Effect Transistors with Short Gate Length of 50 nm and Record Extrinsic Cut-Off Frequency

High-frequency Performance of Scaled Carbon Nanotube Array Field-Effect Transistors

All CVD Boron Nitride Encapsulated Graphene FETs with CMOS Compatible Metal Edge Contacts

Graphene field-effect transistors with gigahertz-frequency power gain on flexible substrates

Novel SiGe/Si Heterojunction Double-Gate Tunneling FETs with a Heterogate Dielectric for High Performance